Datasheet > 10AM12

10AM12

更新时间： 2024-02-02 23:53:25

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	41K
描述
TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 4A I(C) \| SOT-161VAR

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技术参数
数据手册

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10AM12 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
最大集电极电流 (IC)：	4 A	配置：	Single
最小直流电流增益 (hFE)：	20	最高工作温度：	200 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	79 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

10AM12 数据手册

10AM12

12 Watts, 20 Volts, Class A

Linear to 1000 MHz

GENERAL DESCRIPTION

CASE OUTLINE

55JT, STYLE 2

The 10AM12 is a COMMON EMITTER transistor capable of providing 12

Watts of Class A, RF output power to 1000 MHz. This transistor is

specifically designed for general Class A amplifier applications. It utilizes

gold metalization and diffused ballasting to provide high reliability and

supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25^oC

79 Watts

Maximum Voltage and Current

BVces

BVebo

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

45 Volts

3.5 Volts

4.0 Amps

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to +150^oC

+200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX UNITS

Power Out @ 1 dB Compr.

Power Input

Power Gain Small Signal

Transition Frequency

Load Mismatch Tolerance

F = 1.0 GHz

Ic = 3.0 A

Vcc = 20 Volts

Vce = 20 V, Ic =1.8 A

Watts

Pout-1dB

VSWR

2.0

7.5

2.0

8.5

2.5

GHz

30:1

BVebo¹

BVces¹

BVceo¹

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC Current Gain

Ie = 12 mA

Ic = 25 mA

Vce = 5V, Ic =1000 mA

Vcb = 28V, f =1.0 MHz

3.5

Volts

h_FE

Cob¹

Output Capacitance

^oC/W

Thermal Resistance

2.0

2.2

Note 1: Per Side

Issue A July 1997

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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