Datasheet > 10-FZ07LBA100SM01-L705L18

10-FZ07LBA100SM01-L705L18

更新时间： 2023-09-03 20:35:11

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
21页	7673K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

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10-FZ07LBA100SM01-L705L18

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Buck Diode

V_RRM

Peak repetitive reverse voltage

650

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

200

122

175

P_tot

°C

T_jmax

Maximum junction temperature

Boost Switch

V_CES

Collector-emitter voltage

650

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

300

133

±20

175

P_tot

V_GES

Gate-emitter voltage

T_jmax

Maximum junction temperature

°C

Boost Diode

V_RRM

Peak repetitive reverse voltage

1200

I_F

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

550

1513

122

175

Single Half Sine Wave,

t_p= 10 ms

A²s

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

Capacitor (DC)

V_MAX

Maximum DC voltage

500

T_op

Operation Temperature

-55 ... 125

°C

28 Sep. 2021 / Revision 2

123 4 5 6 7...21

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