Datasheet > 10-FZ07LBA100SM01-L705L18

10-FZ07LBA100SM01-L705L18

更新时间： 2023-09-03 20:35:11

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
21页	7673K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

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10-FZ07LBA100SM01-L705L18

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Boost Diode

Static

2,24

2,45

2,38

2,52⁽¹⁾

V_F

I_R

Forward voltage

100

125

150

2,47⁽¹⁾

120

Reverse leakage current

Thermal

V_r= 1200 V

µA

150

8800

17700

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,78

K/W

78,52

106,41

116,57

119,16

219,11

243,11

4,92

I_RRM

Peak recovery current

125

150

t_rr

Reverse recovery time

125

150

di/dt=4646 A/µs

di/dt=3416 A/µs

di/dt=3473 A/µs

Q_r

Recovered charge

-5/15

350

125

150

10,04

12,44

0,89

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

2,19

mWs

A/µs

2,78

3514

(di_rf/dt)_max

125

150

3663

3540

28 Sep. 2021 / Revision 2

1...3 4 567 8 9...21

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