Datasheet > 10-FE06PPA020SJ-LJ01B08Z

10-FE06PPA020SJ-LJ01B08Z

更新时间： 2024-04-09 19:03:13

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
32页	8674K
描述
IGBT fast 5us short circuit withstand time High speed switching Low EMI Short tail current

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10-FE06PPA020SJ-LJ01B08Z

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_CE= V_GE

0,00028 25

5,8

6,5

1,83

2,06

2,12

1,8⁽³⁾

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

600

0,6

µA

100

None

700

C_ies

C_res

f = 1 Mhz

Reverse transfer capacitance

Thermal

λ_paste= 3,4 W/mK

(PSX)

Thermal resistance junction to sink⁽⁴⁾

Dynamic

1,67

K/W

R_th(j-s)

60,32

59,2

t_d(on)

Turn-on delay time

Rise time

125

150

59,36

30,08

31,2

t_r

125

150

31,2

R_gon= 16 Ω

R_goff= 16 Ω

86,88

107,36

111,84

22,21

38,32

43,74

0,414

0,55

t_d(off)

Turn-off delay time

Fall time

125

150

±15

350

t_f

125

150

Q_rFWD=0,559 µC

Q_rFWD=1,21 µC

Q_rFWD=1,48 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

mWs

0,588

0,229

0,369

0,403

E_off

125

150

30 May. 2023 / Revision 1

1 2 3 456 7 8...32

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