Datasheet > 10-F0062PA200SA01-P996F19

10-F0062PA200SA01-P996F19

更新时间： 2024-01-08 16:36:07

品牌	Logo	应用领域
VINCOTECH		栅
页数	文件大小	规格书
15页	382K
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Insulated Gate Bipolar Transistor

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10-F0062PA200SA01-P996F19 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

10-F0062PA200SA01-P996F19 数据手册

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FZ06 / F0062PA200SA01

preliminary datasheet

Characteristic Values

Conditions

Value

Typ

Parameter

Symbol

Unit

V_r[V] or

V_GE[V] or

I_C[A] or

I_F[A] or

I_D[A]

_CE[V] or

_DS[V]

T_j

Min

Max

_GS[V]

Inverter Transistor

Gate emitter threshold voltage

Collector-emitter saturation voltage

Collector-emitter cut-off current incl. Diode

Gate-emitter leakage current

Integrated Gate resistor

Turn-on delay time

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

5,8

6,5

2,3

V_GE(th)V_CE=V_GE

0,0032

200

1,68

1,99

V_CE(sat)

I_CES

I_GES

R_gint

t_d(on)

t_r

1,25

1000

600

Ω

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

209

222

Rise time

267

301

t_d(off)

t_f

Turn-off delay time

Rgoff=4 Ω

Rgon=4 Ω

±15

300

200

Fall time

1,57

2,56

5,8

E_on

Turn-on energy loss per pulse

Turn-off energy loss per pulse

Input capacitance

mWs

E_off

7,66

C_ies

C_oss

C_rss

Q_Gate

12335

Output capacitance

f=1MHz

Tj=25°C

769

Reverse transfer capacitance

Gate charge

366

±15

480

200

1240

Thermal foil

thickness=76um

Kunze foil KU-

ALF5

R_thJH

Thermal resistance chip to heatsink per chip

0,33

K/W

Inverter Diode

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

1,73

1,7

160,7

209,6

117

142,4

9,51

17,79

5385

4096

2,32

4,34

2,3

V_F

I_RRM

t_rr

Diode forward voltage

200

Peak reverse recovery current

Reverse recovery time

Q_rr

Reverse recovered charge

Peak rate of fall of recovery current

Reverse recovered energy

Rgoff=4 Ω

300

μC

di(rec)max

/dt

A/μs

mWs

Erec

Thermal foil

thickness=76um

Kunze foil KU-

ALF5

R_thJH

Thermal resistance chip to heatsink per chip

0,47

K/W

Revision: 1

1 234 5 6 7...15

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