Datasheet > 10-EZ126PA025M7-L858F78T

10-EZ126PA025M7-L858F78T

更新时间： 2023-09-03 20:38:36

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
16页	3286K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-EZ126PA025M7-L858F78T

10-E1126PA025M7-L858F78Z

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Inverter Switch

Static

V_GE(th)

Gate-emitter threshold voltage

0,0025 25

5,4

6,0

6,6

1,65

1,89

1,95

2,15

Collector-emitter saturation voltage

V_CEsat

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

1200

µA

500

none

4800

170

C_ies

C_oes

C_res

Q_g

Output capacitance

#VALUE!

Reverse transfer capacitance

Gate charge

600

180

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

1,20

K/W

Dynamic

147

149

145

Turn-on delay time

t_d(on)

125

150

Rise time

t_r

125

150

125

150

125

150

125

150

R_gon= 16 Ω

R_goff= 16 Ω

171

191

196

110

115

2,06

2,66

2,82

1,67

2,18

Turn-off delay time

Fall time

t_d(off)

±15

600

t_f

Q_r

FWD

Q_r

FWD

Q_r

FWD

= 2,5 μC

= 3,9 μC

= 4,3 μC

Turn-on energy (per pulse)*

E_on

mWs

125

E_off

Turn-off energy (per pulse)*

* Ls = 14 nH

150

2,29

30 May. 2019 / Revision 4

1 234 5 6 7...16

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