Datasheet > 10-E112PMA015M701-L928A73Z

10-E112PMA015M701-L928A73Z

更新时间： 2024-03-03 10:09:34

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
31页	9403K
描述
IGBT M7 Easy paralleling Low turn-off losses Low collector emitter saturation voltage Positive temperature coefficient Short tail current Switching optimized for EMC

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10-E112PMA015M701-L928A73Z 数据手册

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10-E112PMA015M701-L928A73Z

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Switch

Static

V_GE(th)

Gate-emitter threshold voltage

0,0015

5,4

6,6

1,7

2,1⁽⁶⁾

V_CEsat

Collector-emitter saturation voltage

125

150

1,95

2,01

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

1200

µA

200

None

2900

120

C_ies

C_oes

C_res

Q_g

Output capacitance

Reverse transfer capacitance

Gate charge

V_CC= 600 V

0/15

110

Thermal

λ_paste= 3,4 W/mK

(PSX)

Thermal resistance junction to sink⁽⁷⁾

Dynamic

1,48

K/W

R_th(j-s)

13,32

12,31

12,07

9,03

t_d(on)

Turn-on delay time

Rise time

125

150

t_r

125

150

8,62

8,63

R_gon= 4 Ω

R_goff= 4 Ω

71,65

80,68

83,38

19,52

19,27

19,5

t_d(off)

Turn-off delay time

Fall time

125

150

0/15

700

t_f

125

150

Q_rFWD=0,268 µC

Q_rFWD=0,301 µC

Q_rFWD=0,308 µC

0,491

0,455

0,448

0,278

0,297

0,308

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

mWs

E_off

125

150

16 Aug. 2023 / Revision 1

1 2 3 456 7 8...31

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