Datasheet > 10-E112PMA015M701-L928A73Z

10-E112PMA015M701-L928A73Z

更新时间： 2024-03-03 10:09:34

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
31页	9403K
描述
IGBT M7 Easy paralleling Low turn-off losses Low collector emitter saturation voltage Positive temperature coefficient Short tail current Switching optimized for EMC

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10-E112PMA015M701-L928A73Z 数据手册

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10-E112PMA015M701-L928A73Z

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Brake Diode

V_RRM

Peak repetitive reverse voltage

1200

(4)

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s<= 80 °C

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

°C

T_jmax

Maximum junction temperature

175

(4)

limited by I_FRM

Brake Sw. Protection Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

1200

(5)

I_F

T_j= T_jmax

T_s<= 80 °C

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

°C

T_jmax

Maximum junction temperature

175

(5)

limited by I_FRM

Rectifier Diode

V_RRM

Peak repetitive reverse voltage

1600

I_F

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

270

370

Single Half Sine Wave,

t_p= 10 ms

A²s

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

150

16 Aug. 2023 / Revision 1

1 234 5 6 7...31

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