Datasheet > 10-0B06PPA004RC-L022A09

10-0B06PPA004RC-L022A09

更新时间： 2023-09-03 20:39:27

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
31页	3655K
描述
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels

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10-0B06PPA004RC-L022A09

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

PFC Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_GE= V_CE

0,0004 25

3,3

4,7

1,64

1,77

1,80

2,22

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

650

µA

120

none

930

C_ies

C_oes

C_res

Q_g

Output capacitance

f = 1 Mhz

Reverse transfer capacitance

Gate charge

520

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

2,14

K/W

Dynamic

t_d(on)

125

150

Turn-on delay time

t_r

Rise time

125

150

125

150

125

150

125

150

129

141

145

0,418

0,535

0,571

0,106

R_gon= 32 Ω

R_goff= 32 Ω

t_d(off)

Turn-off delay time

Fall time

0 / 15

400

t_f

Q_r

FWD

Q_r

FWD

Q_r

FWD

= 0,5 μC

= 0,9 μC

= 1 μC

E_on

Turn-on energy (per pulse)

mWs

E_off

Turn-off energy (per pulse)

125

150

0,141

0,154

18 Feb. 2019 / Revision 5

1...3 4 567 8 9...31

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