Datasheet > 10-0B06PPA004RC-L022A09

10-0B06PPA004RC-L022A09

更新时间： 2023-09-03 20:39:27

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
31页	3655K
描述
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels

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10-0B06PPA004RC-L022A09

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Rectifier Diode

Static

1,04

0,97

1,14

V_F

I_R

Forward voltage

Reverse leakage current

Thermal

125

1600

µA

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

2,09

K/W

Inverter Switch

Static

V_GE(th)

0,000075

Gate-emitter threshold voltage

V_GE= V_CE

4,4

5,6

1,88

2,20

2,30

2,29

2,62

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

600

µA

120

none

305

C_ies

C_oes

C_res

Q_g

Output capacitance

f = 1 Mhz

Reverse transfer capacitance

Gate charge

480

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

2,60

K/W

Dynamic

125

0,099

0,158

0,049

0,079

t_d(on)

t_r

t_d(off)

t_f

Turn-on delay time

Rise time

R_gon= 64 Ω

R_goff= 64 Ω

Turn-off delay time

Fall time

±15

400

Q_r

= 0,2 μC

= 0,4 μC

FWD

E_on

E_off

Turn-on energy (per pulse)

Turn-off energy (per pulse)

FWD

mWs

18 Feb. 2019 / Revision 5

1 2 345 6 7...31

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