1.5SMC Series
Vishay General Semiconductor
www.vishay.com
®
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
DO-214AB (SMC)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
5.8 V to 459 V
TYPICAL APPLICATIONS
V
BR (uni-directional)
6.8 V to 540 V
6.8 V to 220 V
1500 W
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
V
BR (bi-directional)
PPPM
PD
6.5 W
I
FSM (uni-directional only)
200 A
MECHANICAL DATA
TJ max.
150 °C
Case: DO-214AB (SMC)
Polarity
Uni-directional, bi-directional
DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
Base P/NHE3 - RoHS compliant and AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Package
DEVICES FOR BI-DIRECTION APPLICATIONS
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
For bi-directional devices use CA suffix (e.g.
1.5SMC220CA).
Electrical characteristics apply in both directions.
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
IPPM
VALUE
1500
UNIT
W
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)
Power dissipation on infinite heatsink at TA = 50 °C
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
See next table
6.5
A
PD
W
IFSM
200
A
TJ, TSTG
- 65 to + 150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal
(2)
Revision: 14-Dec-12
Document Number: 88303
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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