1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A
www.vishay.com
Vishay General Semiconductor
100
10
1
100
10
1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.1
0.001
0
0.4
0.8
1.2
1.6
2.0
0.01
0.1
1
10
100
1000
Instantaneous Forward Voltage (V)
tp - Pulse Duration (s)
Fig. 11 - Instantaneous Forward Voltage Characteristics Curve
Fig. 12 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style 1.5KE
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
APPLICATION NOTES
• This series of Silicon Transient Suppressors is used in
applications where large voltage transients can
permanently damage voltage-sensitive components.
• This Transient Voltage Suppressor diode has a pulse
power rating of 1500 W for 1 ms. The response time of
TVS diode clamping action is effectively instantaneous
(1 x 10-9 s bi-directional); therefore, they can protect
integrated circuits, MOS devices, hybrids, and other
voltage sensitive semiconductors and components. TVS
diodes can also be used in series or parallel to increase
the peak power ratings.
• The TVS diode can be used in applications where
induced lightning on rural or remote transmission
lines presents
a
hazard to electronic circuitry
(ref: R.E.A. specification P.E. 60).
Revision: 09-Aug-2022
Document Number: 88301
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000