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1.5KE12PRL

更新时间: 2024-01-22 02:54:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管
页数 文件大小 规格书
6页 207K
描述
1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CB429, 2 PIN

1.5KE12PRL 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.19
Is Samacsys:N击穿电压标称值:12 V
最大钳位电压:17.3 V二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码:e3极性:UNIDIRECTIONAL
最大重复峰值反向电压:9.72 V子类别:Transient Suppressors
表面贴装:NO端子面层:MATTE TIN
Base Number Matches:1

1.5KE12PRL 数据手册

 浏览型号1.5KE12PRL的Datasheet PDF文件第1页浏览型号1.5KE12PRL的Datasheet PDF文件第2页浏览型号1.5KE12PRL的Datasheet PDF文件第3页浏览型号1.5KE12PRL的Datasheet PDF文件第5页浏览型号1.5KE12PRL的Datasheet PDF文件第6页 
1.5KExx  
Fig. 2 : Peak pulse power versus exponential pulse duration.  
Fig. 3 : Clamping voltage versus peak pulse current.  
Exponential waveform: tp = 20 µs________  
tp = 1 ms——————-  
tp = 10 ms ...............  
Note : The curves of the figure 3 are specified for a junction temperature of 25°C before surge.  
The given results may be extrapolated for other junction temperatures by using the following formula :  
VBR = αT* (Tamb -25) * VBR(25°C).  
For intermediate voltages, extrapolate the given results.  
4/6  

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