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08051J3R9BBT PDF预览

08051J3R9BBT

更新时间: 2024-02-21 05:17:52
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
12页 126K
描述
Gallium Arsenide PHEMT RF Power Field Effect Transistor

08051J3R9BBT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:, 0805
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8532.25.00.45Factory Lead Time:14 weeks
风险等级:5.72电容:0.0000039 µF
电容器类型:FILM CAPACITOR介电材料:SILICON DIOXIDE AND OXYNITRIDE
高度:0.93 mmJESD-609代码:e3
长度:2.01 mm安装特点:SURFACE MOUNT
负容差:6.41%端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
封装形状:RECTANGULAR PACKAGE封装形式:SMT
包装方法:TR, 7/13 INCH正容差:6.41%
额定(直流)电压(URdc):100 V参考标准:AEC-Q200
尺寸代码:0805表面贴装:YES
温度系数:30ppm/Cel ppm/ °C端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形状:WRAPAROUND宽度:1.27 mm
Base Number Matches:1

08051J3R9BBT 数据手册

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