Datasheet > 06F7752

06F7752

更新时间： 2022-01-22 05:48:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
6页	135K
描述
TRANSISTOR MIT DRAIN STROM MESSAUSGANG

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06F7752 数据手册

PD - 9.529B

IRCZ44

HEXFET^®Power MOSFET

l Dynamic dv/dt Rating

l Current Sense

l 175°C Operating Temperature

l Fast Switching

l Ease of Paralleling

l Simple Drive Requirements

V_DSS= 60V

R_DS(on)= 0.028Ω

I_D= 50*A

Description

Third Generation HEXFETs from International Rectifier provide the designer with

the best combination of fast switching, ruggedized device, low on-resistance and

cost-effectiveness.

The HEXSence device provides an accurate fraction of the drain current through

the additional two leads to be used for control or protection of the device. These

devices exhibit similar electrical and thermal characteristics as their IRF-series

equivalent part numbers. The provision of a kelvin source connection effectively

eliminates problems of common source inductance when the HEXSence is

used as a fast, high-current switch in non current-sensing applications.

TO-220 HexSense

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

50*

210

150

1.0

±20

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

dv/dt

T_J

4.5

V/ns

-55 to + 175

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

—

Typ.

—

Max.

1.0

—

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

—

0.50

—

°C/W

Junction-to-Ambient

—

C-13

12 3 4 5 6

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