Datasheet > 05NM60

05NM60

更新时间： 2023-12-06 20:10:54

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友顺 - UTC		/
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6页	240K
描述
N-CH

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05NM60 数据手册

05NM60

Preliminary

Power MOSFET



ELECTRICAL CHARACTERISTICS (T_J=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

I_D=250µA, V_GS=0V

V_DS=600V, V_GS=0V

_GS=+30V, V_DS=0V

600

2.5

µA

Forward

Reverse

+100 nA

-100 nA

Gate-Source Leakage Current

I_GSS

V_GS=-30V, V_DS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=0.25A

4.5

8.8

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

Ω

C_ISS

C_OSS

C_RSS

Output Capacitance

V_GS=0V, V_DS=50V, f=1.0MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge (Note 1)

Gate to Source Charge

Gate to Drain Charge

3.7

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

V_DS=480V, V_GS=10V, I_D=0.5A,

(Note 1, 2)

Turn-ON Delay Time (Note 1)

Rise Time

V_DS=100V, V_GS=10V, I_D=0.5A,

R_G=25ꢀ (Note 1, 2)

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage (Note 1)

Reverse Recovery Time (Note 1)

I_S

I_SM

V_SD

trr

0.5

2.0

1.4

I_S=0.5A, V_GS=0V

I^S=0.5A , VGS=0V

di/dt=100A/μs

120

200

Reverse Recovery Charge

Qrr

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.

2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD

3 of 6

QW-R205-222.b

www.unisonic.com.tw

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