Datasheet > 053

053

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管
页数	文件大小	规格书
6页	417K
描述
SOT89 NPN medium power transistor

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数据手册

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053 数据手册

FCX1053A

Electrical characteristics (at T

= 25°C unless otherwise stated)

amb

Symbol Min.

Parameter

Typ.

Max.

Unit Conditions

Collector-base

breakdown voltage

150

250

I = 100␮A

(BR)CBO

CES

Collector-emitter

breakdown voltage

250

100

250

8.8

I = 100␮A

Collector-emitter

breakdown voltage

I = 10mA

CEO

Collector-emitter

breakdown voltage

150

I = 100␮A, V = 1V

C EB

CEV

Emitter-base breakdown

voltage

I = 100␮A

(BR)EBO

Collector cut-off current

Emitter cut-off current

0.9

0.3

1.5

= 120V

= 4V

CBO

EBO

CES

Collector-emitter cut-off

current

= 120V

CES

(*)

Collector-emitter

saturation voltage

CE(sat)

I = 0.2A, I = 20mA

C B

I = 0.5A, I = 20mA

(*)

150

160

350

900

200

210

440

1000

I = 1A, I = 10mA

(*)

I = 2A, I = 100mA

(*)

I = 4.5A, I = 200mA

(*)

Base-emitter saturation

voltage

BE(sat)

BE(on)

I = 3A, I = 100mA

(*)

Base-emitter turn-on

voltage

825

950

I = 3A, V = 2V

(*)

Static forward current

transfer ratio

270

300

440

450

I = 10mA, V = 2V

(*)

1200

I = 0.5A, V = 2V

(*)

I = 1A, V = 2V

(*)

I = 4.5A, V = 2V

(*)

I = 10A, V = 2V

Switching times

162

I = 2A, I = I = Ϯ20mA,

C B1 B2

= 50V

900

I = 2A, I = I = Ϯ20mA,

C B1 B2

off

= 50V

Transition frequency

140

MHz I = 50mA, V = 10V,

f = 100MHz

Output capacitance

= 10V, f = 1MHz

OBO

NOTES:

(*) Measured under pulsed conditions. Pulse width = 300␮s. Duty Յ2%.

Issue 2 - July 2006

www.zetex.com

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