Z01 Series
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5: Surge peak on-state current versus
number of cycles.
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
ITSM(A)
2.5
9
8
t=20ms
IGT
2.0
7
One cycle
Non repetitive
Tj initial=25°C
6
5
4
3
2
1
0
1.5
IH & IL
1.0
Repetitive
Tamb=25°C
0.5
Tj(°C)
Number of cycles
0.0
1
10
100
1000
-40 -20
0
20
40
60
80 100 120 140
Fig. 6: Non-repetitive surge peak on-state
current for sinusoidal pulse with width
Fig. 7: On-state characteristics (maximum
values).
a
tp < 10ms, and corresponding value of I²t.
ITM(A)
ITSM (A), I²t (A²s)
10.0
100.0
Tj initial=25°C
dI/dt limitation:
20A/µs
ITSM
10.0
1.0
Tj=Tj max.
1.0
I²t
Tj=25°C
Tj max.
Vto= 0.95 V
Rd= 420 mΩ
tp (ms)
VTM(V)
0.1
0.1
0.01
0.10
1.00
10.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
6
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
5
4
3
2
0.8
Z0109
Z0103
0.6
0.4
Z0107
1
Z0110
Tj (°C)
0.2
0.0
(dV/dt)c (V/µs)
0
0.1
1.0
10.0
100.0
0
25
50
75
100
125
5/7