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Z0110MUF2AL2 PDF预览

Z0110MUF2AL2

更新时间: 2022-09-10 15:44:00
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可控硅
页数 文件大小 规格书
12页 127K
描述
Standard 1A Triacs

Z0110MUF2AL2 数据手册

 浏览型号Z0110MUF2AL2的Datasheet PDF文件第2页浏览型号Z0110MUF2AL2的Datasheet PDF文件第3页浏览型号Z0110MUF2AL2的Datasheet PDF文件第4页浏览型号Z0110MUF2AL2的Datasheet PDF文件第6页浏览型号Z0110MUF2AL2的Datasheet PDF文件第7页浏览型号Z0110MUF2AL2的Datasheet PDF文件第8页 
Z01  
Characteristics  
Figure 9.  
On-state characteristics  
(maximum values) (I = f(V  
Figure 10. Relative variation of critical rate  
of decrease of main current versus  
(dV/dt)  
)
TM  
TM  
c
I (A)  
TM  
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
10.0  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
T
= T max.  
j
j
1.0  
Tj=max.  
Vt0=0.95 V  
Rd=400 mΩ  
Z0109  
T
j
= 25°C  
Z0103  
Z0107  
Z0110  
(dV/dt)c (V/µs)  
V
(V)  
TM  
0.1  
0.1  
1.0  
10.0  
100.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
Figure 11. Relative variation of critical rate of Figure 12. SOT-223 and SMBflat-3L thermal  
decrease of main current (dI/dt)  
versus junction temperature  
resistance junction to ambient  
versus copper surface under case  
Rth(j-a)(°C/W)  
170  
160  
150  
140  
130  
120  
110  
100  
90  
(dI/dt)c [T ] / (dI/dt)c [T Specified]  
j
j
6
5
4
3
2
1
0
SMBF3L  
SOT223  
80  
70  
T (°C)  
j
60  
SCU(cm²)  
0
25  
50  
75  
100  
125  
50  
0
1
2
3
4
5
Figure 13. Relative variation of static dV/dt immunity versus junction temperature (gate open)  
dV/dt [Tj] / dV/dt [Tj=125 °C]  
6
VD=VR=402V  
5
4
3
2
1
Tj(°C)  
0
25  
50  
75  
100  
125  
Doc ID 7474 Rev 10  
5/12  

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