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Z0107NA

更新时间: 2024-02-24 19:16:15
品牌 Logo 应用领域
恩智浦 - NXP 可控硅
页数 文件大小 规格书
12页 177K
描述
Logic level four-quadrant triac

Z0107NA 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOT-223包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.07
Is Samacsys:N其他特性:SENSITIVE GATE
外壳连接:MAIN TERMINAL 2配置:SINGLE
最大直流栅极触发电流:5 mA最大直流栅极触发电压:1.5 V
最大维持电流:10 mAJESD-30 代码:R-PDSO-G4
JESD-609代码:e3最大漏电流:0.01 mA
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大均方根通态电流:1 A
断态重复峰值电压:700 V子类别:TRIACs
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:DUAL
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

Z0107NA 数据手册

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Z0107NA  
NXP Semiconductors  
Logic level four-quadrant triac  
6. Characteristics  
Table 6.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
IGT gate trigger current  
VD = 12 V; Tj = 25 °C; T2+ G-;  
see Figure 6  
-
-
5
mA  
VD = 12 V; Tj = 25 °C; T2- G-  
VD = 12 V; Tj = 25 °C; T2+ G+  
VD = 12 V; Tj = 25 °C; T2- G+  
-
-
-
-
-
-
-
-
5
mA  
mA  
mA  
mA  
5
7
IL  
latching current  
VD = 12 V; Tj = 25 °C; IG = 0.1 A; T2+ G-;  
see Figure 7  
20  
VD = 12 V; Tj = 25 °C; IG = 0.1 A; T2+ G+  
VD = 12 V; Tj = 25 °C; IG = 0.1 A; T2- G+  
VD = 12 V; Tj = 25 °C; IG = 0.1 A; T2- G-  
VD = 12 V; Tj = 25 °C; see Figure 10  
IT = 1 A; see Figure 8  
-
-
-
-
-
-
-
10  
10  
10  
10  
1.6  
1.3  
mA  
mA  
mA  
mA  
V
-
-
IH  
holding current  
-
VT  
VGT  
on-state voltage  
gate trigger voltage  
1.3  
-
IT = 0.1 A; VD = 12 V; Tj = 25 °C;  
see Figure 9  
V
IT = 0.1 A; VD = 800 V; Tj = 125 °C  
VD = 800 V; Tj = 125 °C  
0.2  
-
-
-
-
V
ID  
off-state current  
0.5  
mA  
Dynamics charateristics  
dVD/dt  
rate of rise of off-state VDM = 536 V; Tj = 110 °C; gate open  
20  
1
-
-
-
-
V/µs  
V/µs  
voltage  
circuit; see Figure 11  
dVcom/dt  
rate of rise of  
VD = 400 V; Tj = 110 °C;  
commutating voltage  
dIcom/dt = 0.44 A/ms; gate open circuit  
003aaa205  
003aaa203  
4
3
I
GT  
I
L
I
GT(25°C)  
I
L(25°C)  
3
(1)  
(2)  
2
(3)  
(4)  
2
1
0
1
0
50  
50  
0
50  
100  
150  
0
50  
100  
150  
T (°C)  
j
T (°C)  
j
Fig 7. Normalized latching current as a function of  
junction temperature  
Fig 6. Normalized gate trigger current as a function of  
junction temperature  
Z0107NA_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 5 August 2009  
6 of 12  

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