Characteristics
Z01
1
Characteristics
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
SOT-223
TO-92
Ttab = 90 °C
TL = 50 °C
On-state rms current
(full sine wave)
IT(RMS)
1
A
SMBflat-3L Ttab = 107 °C
F = 50 Hz
F = 60 Hz
tp = 10 ms
t = 20 ms
8
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C)
ITSM
A
t = 16.7 ms
8.5
0.35
²
²
²
I t
I t Value for fusing
A s
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
dI/dt
IGM
F = 120 Hz Tj = 125 °C
20
A/µs
Peak gate current
tp = 20 µs
Tj = 125 °C
Tj = 125 °C
1
1
A
PG(AV) Average gate power dissipation
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Table 2.
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Z01
Symbol Test conditions Quadrant
Unit
03
07
09
10
I - II - III
3
5
5
7
10
10
25
25
(1)
IGT
MAX.
MAX.
mA
V
VD = 12 V,
RL = 30 Ω
IV
VGT
VGD
ALL
1.3
0.2
VD = VDRM
RL = 3.3 kΩ,
Tj = 125 °C
,
ALL
MIN.
V
IH (2) IT = 50 mA
MAX.
MAX.
7
7
10
10
20
10
15
25
25
25
50
mA
mA
I - III - IV
II
IL
IG = 1.2 IGT
15
VD = 67% VDRM gate open
Tj = 110 °C
dV/dt (2)
MIN.
MIN.
10
20
1
50
2
100
5
V/µs
V/µs
(dV/dt)c (dI/dt)c = 0.44 A/ms,
0.5
(2)
Tj = 110 °C
1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1.
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Doc ID 7474 Rev 10