Datasheet > Z0103NUF2AL2

Z0103NUF2AL2

更新时间： 2022-09-10 15:50:58

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅
页数	文件大小	规格书
12页	127K
描述
Standard 1A Triacs

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Z0103NUF2AL2 数据手册

Characteristics

Z01

Figure 3.

On-state rms current versus

ambient temperature (free air

convection full cycle)

Figure 4.

Relative variation of thermal

impedance versus pulse duration

)

th(j-a)

(A)

T(RMS)

K=[Z

1.00

/R ]

th(j-a) th(j-a)

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Z01xxA

= 60°C/W

th(j-a)

(SOT-223)

Z01xxMUF

Copper surface area

= 5cm²

_{th (j-a)}= 100°C/W

(SMBflat-3L)

0.10

Z01xxN

= 150°C/W

th(j-a)

(TO-92)

t (s)

(°C)

amb

0.01

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

100

125

Figure 5.

Relative variation of holding

current and latching current versus

junction temperature (typ. values)

Figure 6.

Relative variation of gate trigger

current (I ) and voltage (V

versus junction temperature

)

I_GT, V_GT[T_j] / I_GT, V_GT[T_j=25 °C]

I , I [T ] /I , I [T =25°C]

3.0

2.5

2.0

1.5

1.0

0.5

0.0

2.5

2.0

1.5

1.0

0.5

0.0

I_GTQ1-Q2

I_GTQ3

I_GTQ4

V_GTQ1-Q2-Q3-Q4

I_L

I_H

T (°C)

T_j(°C)

-50

-25

100

125

-50

-25

100

125

Figure 7.

Surge peak on-state current versus Figure 8.

number of cycles

Non-repetitive surge peak

on-state current and corresponding

value of I t sinusoidal pulse width

I_TSM(A)

2 2

(A), I t (A s)

TSM

100.0

10.0

1.0

initial = 25°C

T = 20 ms

One cycle

dI/dt limitation:

20A/µs

TSM

Non repetitive

T_jinitial = 25 °C

Repetitive

T_amb= 95 °C

(ms)

Number of cycles

100 1000

0.1

0.01

0.10

1.00

10.00

4/12

Doc ID 7474 Rev 10

1 2 345 6 7...12

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