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Z0103MN6AA4 PDF预览

Z0103MN6AA4

更新时间: 2024-02-04 07:01:18
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发装置可控硅三端双向交流开关光电二极管
页数 文件大小 规格书
12页 127K
描述
Standard 1A Triacs

Z0103MN6AA4 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.30.00.80Factory Lead Time:7 weeks
风险等级:5.58Is Samacsys:N
外壳连接:MAIN TERMINAL 2配置:SINGLE
关态电压最小值的临界上升速率:0.5 V/us最大直流栅极触发电流:3 mA
最大直流栅极触发电压:1.3 V最大维持电流:7 mA
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:1 A重复峰值关态漏电流最大值:5 µA
断态重复峰值电压:600 V重复峰值反向电压:600 V
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

Z0103MN6AA4 数据手册

 浏览型号Z0103MN6AA4的Datasheet PDF文件第1页浏览型号Z0103MN6AA4的Datasheet PDF文件第3页浏览型号Z0103MN6AA4的Datasheet PDF文件第4页浏览型号Z0103MN6AA4的Datasheet PDF文件第5页浏览型号Z0103MN6AA4的Datasheet PDF文件第6页浏览型号Z0103MN6AA4的Datasheet PDF文件第7页 
Characteristics  
Z01  
1
Characteristics  
Table 1.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
SOT-223  
TO-92  
Ttab = 90 °C  
TL = 50 °C  
On-state rms current  
(full sine wave)  
IT(RMS)  
1
A
SMBflat-3L Ttab = 107 °C  
F = 50 Hz  
F = 60 Hz  
tp = 10 ms  
t = 20 ms  
8
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25 °C)  
ITSM  
A
t = 16.7 ms  
8.5  
0.35  
²
²
²
I t  
I t Value for fusing  
A s  
Critical rate of rise of on-state current  
IG = 2 x IGT , tr 100 ns  
dI/dt  
IGM  
F = 120 Hz Tj = 125 °C  
20  
A/µs  
Peak gate current  
tp = 20 µs  
Tj = 125 °C  
Tj = 125 °C  
1
1
A
PG(AV) Average gate power dissipation  
W
Tstg  
Tj  
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
°C  
Table 2.  
Electrical characteristics (Tj = 25 °C, unless otherwise specified)  
Z01  
Symbol Test conditions Quadrant  
Unit  
03  
07  
09  
10  
I - II - III  
3
5
5
7
10  
10  
25  
25  
(1)  
IGT  
MAX.  
MAX.  
mA  
V
VD = 12 V,  
RL = 30 Ω  
IV  
VGT  
VGD  
ALL  
1.3  
0.2  
VD = VDRM  
RL = 3.3 kΩ,  
Tj = 125 °C  
,
ALL  
MIN.  
V
IH (2) IT = 50 mA  
MAX.  
MAX.  
7
7
10  
10  
20  
10  
15  
25  
25  
25  
50  
mA  
mA  
I - III - IV  
II  
IL  
IG = 1.2 IGT  
15  
VD = 67% VDRM gate open  
Tj = 110 °C  
dV/dt (2)  
MIN.  
MIN.  
10  
20  
1
50  
2
100  
5
V/µs  
V/µs  
(dV/dt)c (dI/dt)c = 0.44 A/ms,  
0.5  
(2)  
Tj = 110 °C  
1. Minimum IGT is guaranteed at 5% of IGT max.  
2. For both polarities of A2 referenced to A1.  
2/12  
Doc ID 7474 Rev 10  

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