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Z0103MN

更新时间: 2024-02-21 05:03:45
品牌 Logo 应用领域
恩智浦 - NXP 栅极触发装置可控硅三端双向交流开关光电二极管PC
页数 文件大小 规格书
12页 248K
描述
Triacs

Z0103MN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
风险等级:5.15Is Samacsys:N
其他特性:SENSITIVE GATE配置:SINGLE
最大直流栅极触发电流:3 mA最大直流栅极触发电压:1.5 V
最大维持电流:7 mAJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
最大漏电流:0.01 mA元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:1 A断态重复峰值电压:700 V
子类别:TRIACs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

Z0103MN 数据手册

 浏览型号Z0103MN的Datasheet PDF文件第2页浏览型号Z0103MN的Datasheet PDF文件第3页浏览型号Z0103MN的Datasheet PDF文件第4页浏览型号Z0103MN的Datasheet PDF文件第6页浏览型号Z0103MN的Datasheet PDF文件第7页浏览型号Z0103MN的Datasheet PDF文件第8页 
Z0103/07/09 series  
Philips Semiconductors  
Triacs  
6. Characteristics  
Table 5:  
Characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
Static characteristics  
IGT  
gate trigger current  
Z0103MA/MN/NA/NN  
Z0107MA/MN/NA/NN  
Z0109MA/MN/NA/NN  
Z0103MA/MN/NA/NN  
Z0107MA/MN/NA/NN  
Z0109MA/MN/NA/NN  
latching current  
VD = 12 V; RL = 30 ; T2+ G+; T2+ G; T2G;  
Figure 9  
-
-
-
-
-
-
-
-
-
-
-
-
3
mA  
mA  
mA  
mA  
mA  
mA  
5
10  
5
VD = 12 V; RL = 30 ; T2G+; Figure 9  
7
10  
IL  
VD = 12 V; RL = 30 ; T2+ G+; T2G; T2G+;  
Figure 7  
Z0103MA/MN/NA/NN  
Z0107MA/MN/NA/NN  
Z0109MA/MN/NA/NN  
-
-
-
-
-
-
-
-
-
-
-
-
7
mA  
mA  
mA  
mA  
mA  
mA  
10  
15  
15  
20  
25  
Z0103MA/MN/NA/NN VD = 12 V; RL = 30 ; T2+ G; Figure 7  
Z0107MA/MN/NA/NN  
Z0109MA/MN/NA/NN  
IH  
holding current  
IT = 50 mA; Figure 8  
Z0103MA/MN/NA/NN  
Z0107MA/MN/NA/NN  
Z0109MA/MN/NA/NN  
on-state voltage  
-
-
7
mA  
mA  
mA  
V
-
-
10  
10  
1.6  
1.3  
-
-
-
VT  
Figure 6  
-
1.3  
VGT  
gate trigger voltage  
VD = 12 V; RL = 30 ; Tj = 25 °C; Figure 11  
VD = VDRM; RL = 3.3 k; Tj = 125 °C; Figure 11  
-
-
-
-
V
0.2  
-
V
ID  
off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 °C  
500  
µA  
Dynamic characteristics  
dVD/dt critical rate of rise of  
VD = 0.67 VDRM(max); Tj = 110 °C; exponential  
off-state voltage  
waveform; gate open; Figure 10  
Z0103MA/MN/NA/NN  
Z0107MA/MN/NA/NN  
Z0109MA/MN/NA/NN  
10  
20  
50  
-
-
-
-
-
-
V/µs  
V/µs  
V/µs  
dVcom/dt critical rate of change of VD = 400 V; IT = 1 A; Tj = 110 °C;  
commutating voltage  
Z0103MA/MN/NA/NN  
Z0107MA/MN/NA/NN  
Z0109MA/MN/NA/NN  
dIcom/dt = 0.44 A/ms; gate open  
0.5  
1
-
-
-
-
-
-
V/µs  
V/µs  
V/µs  
2
9397 750 10102  
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.  
Product data  
Rev. 02 — 12 September 2002  
5 of 12  

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