Z0103MARL1G

更新时间： 2024-02-16 19:29:13

品牌	Logo	应用领域
安森美 - ONSEMI		可控硅栅
页数	文件大小	规格书
10页	190K
描述
Sensitive Gate Triacs Series Silicon Bidirectional Thyristors

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Z0103MARL1G 数据手册

Z0103MA, Z0107MA, Z0109MA

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current

di/dt(c)

1.6

−

A/ms

(V = 400 V, I = 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open,

T = 110°C, f = 250 Hz, with Snubber)

Critical Rate of Rise of Off−State Voltage (V = 67% Rated V

dv/dt

di/dt

V/ms

A/ms

DRM

Exponential Waveform, Gate Open, T = 110°C)

Z0103MA

Z0107MA

Z0109MA

−

Repetitive Critical Rate of Rise of On−State Current, T = 125°C

−

Pulse Width = 20 ms, IPK

= 15 A, diG/dt = 1 A/ms, f = 60 Hz

max

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1 234 5 6 7...10

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型号	品牌	描述	获取价格	数据表
Z0103MARLRFG	ONSEMI	Sensitive Gate Triacs Series Silicon Bidirectional Thyristors	获取价格
Z0103MARLRPG	ONSEMI	Sensitive Gate Triacs Series Silicon Bidirectional Thyristors	获取价格
Z0103MAT/R	NXP	Logic level four-quadrant triac	获取价格
Z0103MN	STMICROELECTRONICS	1A TRIACS	获取价格
Z0103MN	ONSEMI	Sensitive Gate Triac Series Silicon Bidirectional Thyristors	获取价格
Z0103MN	NXP	Triacs	获取价格