Datasheet > XCTN26218400B

XCTN26218400B

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	117K
描述
RES NET,THIN FILM,1.84K OHMS,100WV,.1% +/-TOL,-25,25PPM TC,0303 CASE

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XCTN26218400B 数据手册

CTN

Vishay Electro-Films

Nichrome Thin Film, Center Tapped Resistors

FEATURES

• Wire bondable

Product may not

be to scale

• Center tap feature

• Chip size: 0.030 inches square

• Resistance range total: 10 Ω to 1 MΩ

• Ratio tolerances to: 0.1 %

• Resistor material: Nichrome

• Oxidized silicon substrate for good power dissipation

The CTN series is a center tapped nichrome resistor chip

providing excellent stability at 250 mW power levels. The

CTN offers the designer flexibility in use as either a single

value resistor or as two resistors with a center tap feature.

The CTNs six bonding pads allows the user increased layout

flexibility.

The CTNs are manufactured using Vishay Electro-Films

(EFI) sophisticated thin film equipment and manufacturing

technology. The CTNs are 100 % electrically tested and

visually inspected to MIL-STD-883.

APPLICATIONS

The CTN center-tapped resistor chips are used mainly in feedback circuits of amplifiers where ratio matching, high power and

tracking between two resistors is critical.

Recommended for Hermetic environment where die is not exposed to moisture.

For low values, the resistance of the six bonding-pad configurations can vary, depending on the method of measurement used.

Vishay EFI measures low-value resistors by the four wire Kelvin technique.

TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES AND TOLERANCES

Tightest Standard Tolerance Available

PROCESS CODE

0.1 %

0.2 %

CLASS H*

CLASS K*

263

10 ppmꢁ/C

ꢀ2 ppmꢁ/C

20 ppmꢁ/C

203

202

262

200

260

100 ppmꢁ/C

201

261

*MIL-PRF-38534 inspection criteria

1 kΩ

10 Ω

100 Ω

ꢀ00 Ω

1 MΩ

STANDARD ELECTRICAL SPECIFICATIONS

PARAMETER

TCR Tracking Between Halves (R_AꢁR_B)

Center Tap Ratio, R_AꢁR_BTolerance

Noise, MIL-STD-ꢀ0ꢀ, Method 308, 100 Ω - ꢀ20 kΩ

Stability, 1000 h, + 1ꢀ2 /C, 1ꢀ2 mW

Operating Temperature Range

2 ppm/°C *

1 % standard

- 35 dB typ.

0.1 % ΔR/R

- 55 °C to + 125 °C

Dielectric Voltage Breakdown

200 V

Insulation Resistance

10¹²min.

Operating Voltage

100 V max.

250 mW

DC Power Rating at + 70 /C (Derated to Zero at + 172 /C)

* 20 ppm/°C for R < 20

www.vishay.com

For technical questions, contact: efi@vishay.com

Document Number: 61024

Revision: 12-Mar-08

12 3

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