Datasheet > X0405L-6-TF1-T

X0405L-6-TF1-T

更新时间： 2022-02-26 10:58:20

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描述
4A SCR

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数据手册

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X0405L-6-TF1-T 数据手册

X0405

Preliminary

SCR



ABSOLUTE MAXIMUM RATINGS (limiting values)

PARAMETER

X0405-6

SYMBOL

RATINGS

600

800

UNIT

Repetitive Peak Off-State Voltages

V_DRM/V_RRM

X0405-8

Tl=60°C

RMS On-State Current (180° Conduction

Angle)

I_T(RMS)

I_T(AV)

T_AMB=25°C

1.35

2.5

Tl=60°C

Average On-State Current (180° Conduction

Angle)

T_AMB=25°C

0.9

tp=8.3ms, T_J=25°C

tp=10ms, T_J=25°C

Non Repetitive Surge Peak On-State Current

I_TSM

I²t

A²s

I²t Value for Fusing

4.5

Critical Rate of Rise of On-State Current

I_G=2xI_GT,tr≤100ns

F=60Hz, T_J=125°C

dI/dt

A/µs

Peak Gate Current

tp=20µs, T_J=125°C

T_J=125°C

I_GM

P_G(AV)

T_STG

T_J

1.2

Average Gate Power Dissipation

Storage Junction Temperature

Operating Junction Temperature

0.2

°C

-40~+150

-40~+125

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL RESISTANCES

PARAMETER

SYMBOL

θ_JA

RATINGS

100

UNIT

°C/W

Junction to Ambient (DC)

Junction to Case (DC)

θ_JC



ELECTRICAL CHARACTERISTICS (T_J=25˚C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

V_D=12V, R_L=140Ω

V_D=V_DRM, R_L=3.3kΩ, R_GK=1kΩ, T_J=125°C 0.1

MIN TYP MAX UNIT

Gate Trigger Current

Gate Trigger Voltage

Gate Non-Trigger Voltage

Repetitive Gate Voltage

Holding Current

I_GT

V_GT

V_GD

V_RG

I_H

µA

0.8

I_RG=10µA

I_T=50mA, R_GK=1kΩ

I_G=1mA, R_GK=1kΩ

Latching Current

I_L

Critical Rate of Rise of Off-State

Voltage

dV/dt

V_D=67%V_DRM, R_GK=1kΩ, T_J=110°C

V/µs

Peak On-State Voltage

Threshold Voltage

V_TM

V_TO

R_D

I_TM=8A, t_p=380μs, T_J=25°C

T_J=125°C

1.8

0.95

Dynamic Resistance

T_J=125°C

100 mꢀ

I_DRM

I_RRM

V_DRM=V_RRM, R_GK=1kꢀ, T_J=25°C

V_DRM=V_RRM, R_GK=1kꢀ, T_J=125°C

µA

Repetitive Peak Off-State Current

UNISONIC TECHNOLOGIES CO., LTD

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QW-R301-021.a

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