Datasheet > X0205NN-1BA2

X0205NN-1BA2

更新时间： 2022-11-26 02:00:22

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅
页数	文件大小	规格书
6页	150K
描述
1.25A SCRs

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X0205NN-1BA2 数据手册

X02 Series

Fig. 2-2: Average and D.C. on-state current

versus ambient temperature (device mounted on

FR4 with recommended pad layout) (SOT-223/

TO-92).

Fig. 3: Relative variation of thermal impedance

junction to ambient versus pulse duration

(SOT-223/TO-92).

K = [Zth(j-a)/Rth(j-a)]

IT(av)(A)

1.4

1.00

1.2

SOT-223

TO-92

1.0

SOT-223

0.8

SOT-223

0.10

TO-92

0.6

0.4

TO-92

0.2

Tamb(°C)

tp(s)

1E+0

0.0

0.01

1E-2

100

125

1E-1

1E+1

1E+2 5E+2

Fig. 4: Relative variation of gate trigger current,

holding current and latching current versus

junction temperature (typical values).

Fig. 5: Relative variation of holding current

versus gate-cathode resistance (typical values).

IH[Rgk] / IH[Rgk = 1 kΩ]

IGT, IH, IL[Tj]/IGT, IH, IL[Tj] = 25°C]

4.0

Tj = 25°C

1.50

3.5

3.0

2.5

2.0

1.5

1.0

1.25

1.00

0.75

0.50

0.25

0.00

Ω

Tj(°C)

0.5

Rgk(kΩ)

0.0

-40 -20

40 60

80 100 120 140

1E-2

1E-1

1E+0

1E+1

Fig. 6: Relative variation of dV/dt immunity

Fig. 7: Relative variation of dV/dt immunity

versus gate-cathode resistance (typical values).

versus gate-cathode capacitance (typical values).

dV/dt[Cgk] / dV/dt[Rgk = 1kΩ]

dV/dt[Rgk]/dV/dt [

Rgk=1kΩ]

10.0

Tj = 125°C

VD = 0.67xVDRM

1.0

Cgk(nF)

Rgk(kΩ)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

10 12 14 16 18 20 22

4/6

1 2 345 6

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