Datasheet > X00619

X00619

更新时间： 2022-03-18 20:33:42

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅
页数	文件大小	规格书
10页	183K
描述
0.8 A sensitive gate SCR

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X00619 数据手册

Characteristics

X00619

Characteristics

Table 2.

Symbol

Absolute ratings (limiting values, T = 25 °C unless otherwise specified)

Parameter

Value

Unit

TO-92

T_L= 83 °C

T_c= 107 °C

T_L= 83 °C

T_c= 107 °C

I_T(RMS)On-state rms current (180 °Conduction angle)

IT_(AV)Average on-state current (180 °Conduction angle)

0.8

0.5

SOT-223

TO-92

SOT-223

t_p= 8.3 ms

t_p= 10 ms

I_TSM

Non repetitive surge peak on-state current

T_j= 25 °C

I t

I t Value for fusing

t_p= 10 ms T_j= 25 °C

F = 60 Hz T_j= 125 °C

0.4

A²s

Critical rate of rise of on-state current

_G= 2 x I_GT, t_r≤ 100 ns

di/dt

I_GM

A/µs

Peak gate current

t_p= 20 µs

T_j= 125 °C

P_G(AV)Average gate power dissipation

0.1

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

T_stg

T_j

°C

Table 3.

Symbol

Electrical characteristics (T = 25 °C unless otherwise specified)

Test conditions

Value

Unit

MIN.

200

0.8

0.2

I_GT

µA

V_D= 12 V, R_L= 140 Ω

MAX.

V_GT

V_GD

V_RG

I_H

V_D= V_DRM,R_L= 3.3 kΩ, R_GK= 1 kΩ

I_RG= 10 µA

T_j= 125 °C

MIN.

MAX.

MIN.

I_T= 50 mA, R_GK= 1 kΩ

I_G= 1 mA, R_GK= 1 kΩ

V_D= 67% V_DRM,R_GK= 1 kΩ

V/µs

I_L

dV/dt

Table 4.

Symbol

Static electrical characteristics

Test conditions

T_j= 25 °C

Value

Unit

V_TM

V_TO

R_d

I_TM= 1 A, t_p= 380 µs

Threshold voltage

Dynamic resistance

1.35

0.85

245

T_j= 125 °C

MAX

mΩ

µA

T_j= 25 °C

_DRMI_RRMV_DRM= V_RRM,R_GK= 1 kΩ

T_j= 125 °C

100

2/10

Doc ID 15755 Rev 2

123 4 5 6 7...10

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