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WF2M16W-90DAI5 PDF预览

WF2M16W-90DAI5

更新时间: 2024-01-20 01:24:57
品牌 Logo 应用领域
美高森美 - MICROSEMI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
8页 650K
描述
Flash Module, 2MX16, 90ns, CDSO56, 0.520 INCH, HERMETIC SEALED, CERAMIC, SOP-56

WF2M16W-90DAI5 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:0.520 INCH, HERMETIC SEALED, CERAMIC, SOP-56Reach Compliance Code:unknown
风险等级:5.76最长访问时间:90 ns
其他特性:USER CONFIGURABLE AS 2 X 2M X 8备用内存宽度:8
数据轮询:YESJESD-30 代码:R-CDSO-G56
JESD-609代码:e0长度:23.63 mm
内存密度:33554432 bit内存集成电路类型:FLASH MODULE
内存宽度:16功能数量:1
部门数/规模:32端子数量:56
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX16
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:SSOP
封装等效代码:SOP56,.6,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, SHRINK PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:3.57 mm
部门规模:64K最大待机电流:0.0005 A
子类别:Flash Memories最大压摆率:0.12 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:12.96 mm
Base Number Matches:1

WF2M16W-90DAI5 数据手册

 浏览型号WF2M16W-90DAI5的Datasheet PDF文件第2页浏览型号WF2M16W-90DAI5的Datasheet PDF文件第3页浏览型号WF2M16W-90DAI5的Datasheet PDF文件第4页浏览型号WF2M16W-90DAI5的Datasheet PDF文件第5页浏览型号WF2M16W-90DAI5的Datasheet PDF文件第6页浏览型号WF2M16W-90DAI5的Datasheet PDF文件第7页 
WF2M16-XXX5  
2Mx16 NOR Flash MODULE (SMD 5962-97610*)  
FEATURES  
 Access Times of 90, 120, 150ns  
 Supports reading or programming data to a sector not being  
erased.  
 Packaging:  
 Built-in Decoupling Caps and Multiple Ground Pins for Low  
• 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).  
Fits standard 56 SSOP footprint.  
Noise Operation.  
 RESET# pin resets internal state machine to the read  
• 44 pin Ceramic SOJ (Package 102)**  
 Sector Architecture  
mode.  
 Ready/Busy (RY#/BY#) output for detection of program or  
erase cycle completion.  
• 32 equal size sectors of 64KBytes each  
 Multiple Ground Pins for Low Noise Operation  
• Any combination of sectors can be erased. Also supports  
full chip erase.  
This product is subject to change without notice.  
* For reference only. See table page 7.  
** Package to be developed.  
Note: For programming information and waveforms refer to Flash Programming 16M5 Application  
Notes AN0038.  
 Minimum 100,000 Write/Erase Cycles Minimum  
 Organized as 2Mx16; User Congurable as 2 x 2Mx8  
 Commercial, Industrial, and Military Temperature Ranges  
 5 Volt Read and Write  
 Low Power CMOS  
 Data# Polling and Toggle Bit feature for detection of  
program or erase cycle completion.  
FIGURE 1 – PIN CONFIGURATIONS  
WF2M16-XDAX5  
56 CSOP  
WF2M16-XXX5  
44 CSOJ (DL)**  
PIN DESCRIPTION  
I/O0-15  
A0-20  
WE#  
Data Inputs/Outputs  
Address Inputs  
Write Enable  
Chip Select  
TOP VIEW  
TOP VIEW  
CS1-2#  
OE#  
Output Enable  
Power Supply  
Ground  
CS1#  
A12  
A13  
A14  
A15  
NC  
CS2#  
NC  
A20  
A19  
A18  
A17  
A16  
VCC  
GND  
I/O6  
I/O14  
I/O7  
I/O15  
RY/BY#  
OE#  
WE#  
NC  
I/O13  
I/O5  
I/O12  
I/O4  
VCC  
1
2
3
4
5
6
7
8
56  
55  
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
CS1#  
A12  
A13  
A14  
A15  
NC  
CS2#  
NC  
A20  
A19  
A18  
A17  
A16  
VCC  
GND  
I/O6  
I/O14  
I/O7  
I/O15  
RY/BY#  
OE#  
WE#  
NC  
I/O13  
I/O5  
I/O12  
I/O4  
VCC  
1
2
3
4
5
6
7
8
56  
55  
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
NC  
NC  
#RESET  
A11  
A10  
A9  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
GND  
A8  
VCC  
I/O9  
I/O1  
VCC  
#RESET  
A11  
A10  
A9  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
GND  
A8  
VCC  
I/O9  
I/O1  
VSS  
RY/BY#  
RESET#  
Ready/Busy  
Reset  
9
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
BLOCK DIAGRAM  
I/O0-7  
I/O8-15  
39 I/O8  
38 I/O0  
37 A0  
36 NC  
35 NC  
34 NC  
33 I/O2  
32  
31  
30  
29  
39 I/O8  
38 I/O0  
37 A0  
36 NC  
35 NC  
34 NC  
33  
32  
31  
30  
29  
RESET#  
WE#  
OE#  
A0-20  
RY/BY#  
I/O2  
I/O10  
I/O3  
I/O11  
GND  
I/O10  
I/O3  
I/O11  
GND  
2M x 8  
2M x 8  
** Package to be developed.  
CS1#  
CS2#  
NOTE:  
1. RY/BY# is an open drain output and should be pulled up to Vcc with an external resistor.  
2. Address compatible with Intel 2M8 56 SSOP.  
Microsemi Corporation reserves the right to change products or specications without notice.  
June 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 8  
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  

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