Datasheet > VS-E5TX3006-M3

VS-E5TX3006-M3

更新时间： 2023-12-06 20:10:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	190K
描述
Hyperfast Rectifier, 30 A FRED Pt? G5

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VS-E5TX3006-M3 数据手册

VS-E5TX3006-M3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 30 A FRED Pt^®G5

FEATURES

Base cathode

• Best in class forward voltage drop and

switching losses trade off

• Optimized for high speed operation

•

175 °C maximum operating junction temperature

• Polyimide passivation

• Meets JESD 201 class 1A whisker test

Anode

Cathode

TO-220AC 2L

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

DESCRIPTION / APPLICATIONS

Featuring a unique combination of low conduction and

switching losses, this rectifier is the right choice for soft

switched and resonant converters, as well as medium

frequency hard switching converters. This device is

specifically designed to improve efficiency of high speed

LLC output rectification stages of EV / HEV battery charging

stations and high frequency stages of UPS applications.

3D Models

Application

Notes

PRIMARY CHARACTERISTICS

I_F(AV)

30 A

600 V

1.3 V

V_R

V_Fat I_Fat 125 °C

T_Jmax.

175 °C

22 ns

MECHANICAL DATA

t_rr(typ.)

Case: TO-220AC 2L

Molding compound meets UL 94 V-0 flammability rating

Package

TO-220AC 2L

Single

Circuit configuration

Terminals: matte tin plated leads, solderable per

J-STD-002

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

T_C= 106 °C, D = 0.50

VALUES

UNITS

Repetitive peak reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Repetitive peak forward current

Operating junction and storage temperature

600

I_F(AV)

I_FSM

T_C= 25 °C, t_p= 10 ms, sine wave

T_C= 106 °C, D = 0.50, f = 20 kHz

310

I_FRM

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX. UNITS

V_BR

V_R

Breakdown voltage, blocking voltage

I_R= 100 μA

600

I_F= 30 A

1.6

1.3

2.1

Forward voltage

V_F

I_R

I_F= 30 A, T_J= 125 °C

V_R= V_Rrated

μA

Reverse leakage current

T_J= 125 °C, V_R= V_Rrated

V_R= 200 V

500

Junction capacitance

Series inductance

C_T

L_S

Measured to lead 5 mm from package body

Revision: 18-May-2022

Document Number: 96754

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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