Datasheet > VP0550

VP0550

更新时间： 2024-01-27 19:39:23

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	449K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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VP0550 数据手册

VP0550

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

I_D(ON)

BV_DSS

R_DS(ON)

BV_DGS

(max)

(min)

TO-92

-500V

125Ω

-100mA

VP0550N3

Features

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

❏

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C_ISSand fast switching speeds

Excellent thermal stability

Integral Source-Drain diode

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

High input impedance and high gain

Complementary N- and P-channel devices

Applications

❏

Motor controls

Package Option

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

S G D

BV_DSS

BV_DGS

± 20V

TO-92

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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与VP0550相关器件

型号	品牌	获取价格	描述	数据表
VP0550N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.125A I(D), 500V, 1-Element, P-Channel, Silicon, Me
VP0550N3	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
VP0550N3P003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.054A I(D), 500V, 1-Element, P-Channel, Silicon, Me
VP0550N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.07A I(D), 500V, 1-Element, P-Channel, Silicon, Met
VP0550N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.07A I(D), 500V, 1-Element, P-Channel, Silicon, Met
VP0550N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.07A I(D), 500V, 1-Element, P-Channel, Silicon, Met
VP0550N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.07A I(D), 500V, 1-Element, P-Channel, Silicon, Met
VP0550N3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.07A I(D), 500V, 1-Element, P-Channel, Silicon, Met
VP0550N3P013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.07A I(D), 500V, 1-Element, P-Channel, Silicon, Met
VP0550N3P016	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.07A I(D), 500V, 1-Element, P-Channel, Silicon, Met

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