Datasheet > VP0104_07

VP0104_07

更新时间： 2024-01-07 06:42:35

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	226K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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中文翻译

获取价格

数据手册

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VP0104_07 数据手册

VP0104/VP0106/VP0109

Thermal Characteristics

Package

I_D(continuous)*

I_D(pulsed)

Power Dissipation

@ T_C= 25^oC

θ_jc

θ_ja

^oC/W

I_DR

I_DRM

^oC/W

TO-92

-0.25A

-0.8A

1.0W

125

170

-0.25A

-0.8A

* I_D(continuous) is limited by max rated T_j.

Electrical Characteristics (@ 25^oC unless otherwise specified)

Symbol

Parameter

Min

-90

-60

-40

-1.5

Typ

Max

Unit

Conditions

VP0109

VP0106

VP0104

BV_DSS

Drain-to-Source

Breakdown Voltage

I_D= -1.0mA, V_GS= 0V

V_GS(th)

∆V_GS(th)

I_GSS

Gate Threshold Voltage

-3.5

6.5

mV/^oC

V_GS= V_DS, I_D= -1.0mA

I_D= -1.0mA, V_GS= V_DS

V_GS= 20V, V_DS= 0V

Change in V_GS(th)with Temperature

Gate Body Leakage

5.8

-1.0

-100

-10

I_DSS

Zero Gate Voltage Drain Current

µA

V_GS= 0V, V_DS= Max Rating

V_GS= 0V, V_DS= 0.8 Max Rating

T_A= 125^oC

-1

I_D(ON)

ON-State Drain Current

-0.15

-0.50

-0.25

-1.2

V_GS= -5V, V_DS= -25V

V_GS= -10V, V_DS= -25V

V_GS= -5V, I_D= -0.1A

V_GS= -10V, I_D= -0.5A

V_DS= -25V, I_D= -0.5A

R_DS(ON)

8.0

1.0

Static Drain-to-Source

ON-State Resistance

6.0

0.55

190

∆R_DS(ON)

G_FS

C_ISS

C_OSS

C_RSS

t_d(ON)

t_r

Change in R_DS(ON)with Temperature

Forward Transconductance

Input Capacitance

%/^oC

150

V_GS= 0V, V_DS= -25V

f = 1 MHz

Common Source Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

V_DD= -25V

Rise Time

-2.0

I_D= -0.5A

t_d(OFF)

t_f

Turn-OFF Delay Time

Fall Time

R_GEN= 25Ω

V_SD

t_rr

Diode Forward Voltage Drop

Reverse Recovery Time

-1.2

400

I_SD= -1.0A, V_GS= 0V

Notes:

1. All D.C. parameters 100% tested at 25^oC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

10%

PULSE

GENERATOR

INPUT

90%

-10V

R_gen

t_(ON)

t_d(ON)

t_(OFF)

t_d(OFF)

t_r

t_F

D.U.T.

OUTPUT

INPUT

90%

R_L

OUTPUT

V_DD

10%

V_DD

123 4

中文翻译

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与VP0104_07相关器件

型号	品牌	获取价格	描述	数据表
VP0104N2	NJSEMI	获取价格	Trans MOSFET P-CH 40V 0.25A 3-Pin TO-92
VP0104N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.45A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
VP0104N3	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
VP0104N3	NJSEMI	获取价格	Trans MOSFET P-CH 40V 0.25A 3-Pin TO-92
VP0104N3-GP014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor,
VP0104N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
VP0104N3P002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
VP0104N3P003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
VP0104N3P006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
VP0104N3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Meta

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