Datasheet > V20120C_11

V20120C_11

更新时间： 2024-02-17 07:54:58

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	130K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V20120C_11 数据手册

New Product

V20120C, VI20120C

Vishay General Semiconductor

RATINGS AND CHARACTERISTICS CURVES

(T_A= 25 °C unless otherwise noted)

100

Resistive or Inductive Load

T_A= 150 °C

T_A= 125 °C

T_A= 100 °C

0.1

0.01

T_A= 25 °C

Mounted on Specific Heatsink

0.001

100

125

150

175

90 100

Case Temperature (°C)

Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 4 - Typical Reverse Characteristics Per Diode

10 000

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

D = 0.8

D = 0.5

D = 0.3

1000

100

D = 0.2

D = 0.1

D = 1.0

D = t_p/T

t_p

0.1

100

Reverse Voltage (V)

Average Forward Current (A)

Fig. 2 - Forward Power Loss Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

100

Junction to Case

T_A= 150 °C

T_A= 125 °C

T_A= 100 °C

T_A= 25 °C

0.01

0.1

100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

t - Pulse Duration (s)

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

Document Number: 89159

Revision: 23-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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