是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.62 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 790 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 700 V | 最大漏极电流 (Abs) (ID): | 12 A |
最大漏极电流 (ID): | 12 A | 最大漏源导通电阻: | 1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 52 W |
最大脉冲漏极电流 (IDM): | 48 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
12N70G-TF2-T | UTC | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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|
12N70G-TF3-T | UTC | 12 Amps, 700 Volts N-CHANNEL MOSFET |
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|
12N70G-TF3T-T | UTC | Power Field-Effect Transistor, |
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|
12N70KG-TF1-T | UTC | N-CHANNEL POWER MOSFET |
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|
12N70KL-TF1-T | UTC | N-CHANNEL POWER MOSFET |
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|
12N70K-MT | UTC | N-CHANNEL POWER MOSFET |
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