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USB50812C PDF预览

USB50812C

更新时间： 2024-11-28 11:52:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管电视光电二极管局域网
页数 文件大小 规格书
2页 95K
描述
TVSarray Series

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中文翻译

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USB50812C 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：SOD
包装说明：PLASTIC, SOP-8针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.61
Is Samacsys：N其他特性：ULTRA LOW CAPACITANCE
最小击穿电压：13.3 V配置：SEPARATE, 4 ELEMENTS
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
最大非重复峰值反向功率耗散：500 W元件数量：4
端子数量：8最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：235极性：BIDIRECTIONAL
最大重复峰值反向电压：12 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：20
Base Number Matches：1

USB50812C 数据手册

 浏览型号USB50812C的Datasheet PDF文件第2页 
8700 E. Thomas Road  
Scottsdale, AZ 85252  
Tel: (480) 941-6300  
Fax: (480) 947-1503  
USB50803C  
thru  
USB50824C  
TVSarrayÔ Series  
DESCRIPTION (500 watt)  
This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged  
in an SO-8 configuration giving protection to 2 Bidirectional data or  
interface lines. It is designed for use in applications where protection  
is required at the board level from voltage transients caused by  
electrostatic discharge (ESD) as defined in IEC 1000-4-2, electrical  
fast transients (EFT) per IEC 1000-4-4 and effects of secondary  
lighting.  
These TVS arrays have a peak power rating of 500 watts for an  
8/20msec pulse. This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS  
DRAM’s, SRAM’s, HCMOS, HSIC microprocessors, UNIVERSAL SERIAL BUS (USB) and I/O transceivers.  
The USB508XXC product provides board level protection from static electricity and other induced voltage  
surges that can damage or upset sensitive circuitry.  
FEATURES  
MECHANICAL  
·
·
·
·
·
·
Protects up to 2 Bidirectional lines  
·
·
·
·
Molded SO-8 Surface Mount  
Surge protection Per IEC 1000-4-2, IEC 1000-4-4  
Provides electrically isolated protection  
SO-8 Packaging  
ULTRA ULTRA LOW CAPACITANCE 3 pF per line pair  
ULTRA LOW LEAKAGE  
Weight: 0.066 grams (approximate)  
Marking: Logo, device number, date code  
Pin #1 defined by DOT on top of package  
MAXIMUM RATINGS  
PACKAGING  
·
·
·
·
Operating Temperatures: -550C to +1500C  
Storage Temperature: -550C to +1500C  
Peak Pulse Power: 500 Watts (8/20 msec, Figure 1)  
Pulse Repetition Rate: <.01%  
·
·
·
Tape & Reel EIA Standard 481-1-A  
13 inch reel 2,500, pieces (OPTIONAL)  
Carrier tubes 95 pcs per (STANDARD)  
ELECTRICAL CHARACTERISTICS PER LINE @ 250C Unless otherwise specified  
STAND  
OFF  
VOLTAGE  
VWM  
BREAKDOWN  
VOLTAGE  
VBR  
CLAMPING  
VOLTAGE  
VC  
@ 1 Amp  
(FIGURE 2)  
VOLTS  
CLAMPING  
VOLTAGE  
VC  
@ 5 Amp  
(FIGURE 2)  
VOLTS  
LEAKAGE  
CURRENT  
ID  
CAPACITANCE  
(f=1 MHz)  
@0V  
TEMPERATURE  
COEFFICIENT  
OF VBR  
DEVICE  
MARKING  
@1 mA  
@ VWM  
C
áVBR  
PARTNUMBER  
VOLTS  
VOLTS  
µA  
pF  
mV/°C  
MAX  
3.3  
MIN  
4
MAX  
8
MAX  
11  
MAX  
200  
40  
1
TYP  
3
MAX  
-5  
USB50803C  
USB50805C  
USB50812C  
USB50815C  
USB50824C  
3C  
5C  
5.0  
6.0  
10.8  
19  
13  
3
1
12C  
15C  
24C  
12.0  
15.0  
24.0  
13.3  
16.7  
26.7  
26  
3
8
25  
32  
1
3
11  
28  
44  
57  
1
3
NOTE: TVS product is normally selected based on its stand off Voltage VWM. Product selected voltage should be  
equal to or greater than the continuous peak operating voltage of the circuit to be protected.  
Application: The USB508XXC product is designed for transient voltage suppression protection of ESD sensitive  
components at the board level. It is an ideal product to be used for protection of I/O Transceivers.  
MSC1535.PDF  
ISO 9001 CERTIFIED  
REV C 7/07/2000  
12

中文翻译

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USB50812C/TR13 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Bidirectional, 4 Element, Silicon, SOP-8
USB50812C-A MICROSEMI

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 		Bidirectional Low Capacitance TVSarray ™
USB50812C-A/TR13 MICROSEMI

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 		ESD Suppressor TVS 8-Pin SO T/R
USB50812C-AE3 MICROSEMI

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 		Bidirectional Low Capacitance TVSarray ™
USB50812C-AE3/TR13 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Bidirectional, 4 Element, Silicon, ROHS
USB50812C-AE3/TR7 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Bidirectional, 4 Element, Silicon, ROHS
USB50812CE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Bidirectional, 4 Element, Silicon, ROHS
USB50812C-T13 PROTEC

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 		Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Bidirectional, 4 Element, Silicon, ROHS
USB50812C-T7 PROTEC

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 		Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Bidirectional, 4 Element, Silicon, ROHS
USB50812C-TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Bidirectional, 4 Element, Silicon, PLAST

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