SILICON MMIC
L/S BAND DOWNCONVERTER
UPC2782GR
FEATURES
INTERNAL BLOCK DIAGRAM
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WIDEBAND OPERATION: 900 - 2100 MHz
HIGH DYNAMIC RANGE: +4.5 dBm IIP3
HIGH LO-RF ISOLATION: -40 dBm Leakage
VARIABLE GAIN IF AMP: 25 dB Control Range
INTERNAL LO
V
CC (LO)
V
CC (IF)
20
19
1
2
3
4
5
6
7
BIAS
CKT
V
CC (LO OUT
)
V
CC (MIX)
GND (MIX)
RF IN
GND (LO)
18
17
16
SMALL 20 PIN SSOP PACKAGE
LO OUT
TAPE AND REEL PACKAGING OPTION AVAILABLE
LO (B2)
GND (MIX)
DESCRIPTION
LO (C1)
LO (C2)
15
14
IF OUT
Vagc
The UPC2782GR is a Silicon Monolithic Microwave Inte-
grated Circuit manufactured using the NESAT III process.
This process produces transistors with fT of 20 GHz. This
device consists of a Gilbert cell mixer, two stages of LO
buffering, local oscillator, external filter port, a high output
variable gain IF amp, and a temperature compensation
circuit. The device was specifically designed for digital
satellite receivers, WLAN's, and other digital receiver appli-
cations.
8
9
13
IF AMP IN
GND (IF)
IF AMP IN
LO (B1)
12
11
GND (LO)
IF AMP OUT
10
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C, Vcc = 5V, PLO = -10 dBm, ZL = ZS = 50 Ω unless otherwise specified)
PART NUMBER
PACKAGE OUTLINE
UPC2782GR
S20
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICC
Circuit Current
mA
46
66
78
fRFin
fIFout
CG
RF Frequency Response, PRFin = -20dBm, fIF = 480 MHz, -3 dB down
IF Frequency Response, PRFin = -20 dBm, fRF = 2.1 GHz, -3 dB down
Conversion Gain1, fRF = 900 MHz, fLO= 1380 MHz
fRF = 2.1 GHz, fLO = 2.58 GHz
GHz
MHz
0.9
2.1
150
500
dB
dB
7
8
10
11
13
14
PSAT
Saturated Output Power2, fRF = 900 MHz, fLO = 1380 MHz
fRF = 2.1 GHz, fLO = 2.58 GHz
dBm
dBm
+2
+2
+5
+5
NF
Noise Figure, fRF = 900 MHz
fRF = 2.1 GHz
dB
dB
11
13.5
14
16.5
IIP3
Input 3rd Order Intercept Point, fRF = 900, 930 MHz, fLO = 1380 MHz
fRF = 2.1, 2.13 GHz, fLO = 2.58 GHz
dBm
dBm
0
+4.5
IM3
Two-Tone 3rd Order Intermod Level,
fRF = 900, 930 MHz, PRF = -25 dBm each, fLO = 1380 MHz
fRF = 2.1, 2.13 GHz, PRF = -25 dBm each, fLO = 2.58 GHz
dBc
dBc
50
59
PLOout
LOLRF
LOLIF
PN
Internal LO Output Power (pin 17), fLO = 1.9 GHz
LO Leakage to RF Pin, fLO = 1.0 ~ 2.6 GHz
LO Leakage to IF Pin, fLO = 1.0 ~ 2.6 GHz
SSB Phase Noise, 10 KHz Offset
dBm
dBm
-15
-40
-20
-75
dBm
dBc/Hz
GHz
fOSC
Oscillator Frequency Range
1.3
2.6
California Eastern Laboratories