Transistors with built-in Resistor
UNR211x Series (UN211x Series)
Silicon PNP epitaxial planar type
Unit: mm
+0.10
–0.05
0.40
+0.10
For digital circuits
0.16
–0.06
3
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
1
2
• Mini type package allowing easy automatic insertion through tape
(0.95) (0.95)
packing and magazine packing
1.9 0.1
+0.20
2.90
–0.05
■ Resistance by Part Number
10˚
Marking Symbol (R1)
(R2)
• UNR2110 (UN2110)
• UNR2111 (UN2111)
• UNR2112 (UN2112)
• UNR2113 (UN2113)
• UNR2114 (UN2114)
• UNR2115 (UN2115)
• UNR2116 (UN2116)
• UNR2117 (UN2117)
• UNR2118 (UN2118)
• UNR2119 (UN2119)
• UNR211D (UN211D)
• UNR211E (UN211E)
• UNR211F (UN211F)
• UNR211H (UN211H)
• UNR211L (UN211L)
6L
6A
6B
6C
6D
6E
6F
6H
6I
6K
6M
6N
6O
6P
6Q
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
22 kΩ
2.2 kΩ
4.7 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
R1
B
C
E
R2
• UNR211M (UN211M) EI
• UNR211N (UN211N)
• UNR211T (UN211T)
• UNR211V (UN211V)
• UNR211Z (UN211Z)
EW
EY
FC
FE
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
−50
−50
V
Collector current
IC
PT
−100
mA
mW
°C
200
Total power dissipation
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00006CED
1