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U0406FC36C PDF预览

U0406FC36C

更新时间: 2024-01-18 11:22:33
品牌 Logo 应用领域
PROTEC /
页数 文件大小 规格书
6页 108K
描述
UNBUMPED FLIP CHIP ARRAY

U0406FC36C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:FLIP-CHIP包装说明:R-XBCC-N6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.92最小击穿电压:40 V
击穿电压标称值:40 V最大钳位电压:84 V
配置:COMMON BIPOLAR TERMINAL, 6 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-XBCC-N6
JESD-609代码:e0湿度敏感等级:1
最大非重复峰值反向功率耗散:250 W元件数量:6
端子数量:6封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):245极性:BIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:36 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

U0406FC36C 数据手册

 浏览型号U0406FC36C的Datasheet PDF文件第1页浏览型号U0406FC36C的Datasheet PDF文件第3页浏览型号U0406FC36C的Datasheet PDF文件第4页浏览型号U0406FC36C的Datasheet PDF文件第5页浏览型号U0406FC36C的Datasheet PDF文件第6页 
U0406FC3.3C  
thru  
U0406FC36C  
DEVICE CHARACTERISTICS  
MAXIMUM RATINGS @ 25°C Unless Otherwise Specified  
SYMBOL  
VALUE  
250  
UNITS  
Watts  
°C  
PARAMETER  
PPP  
TJ  
Peak Pulse Power (tp = 8/20µs) - See Figure 1  
OperatingTemperature  
-55°C to 150°C  
-55°C to 150°C  
StorageTemperature  
TSTG  
°C  
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless Otherwise Specified  
PART  
NUMBER  
(See Note 1)  
RATED  
STAND-OFF  
VOLTAGE  
MINIMUM  
BREAKDOWN  
VOLTAGE  
MAXIMUM  
CLAMPING  
VOLTAGE  
MAXIMUM  
CLAMPING  
VOLTAGE  
MAXIMUM  
LEAKAGE  
CURRENT  
(See Note 2)  
TYPICAL  
CAPACITANCE  
(See Fig. 2)  
(See Fig. 2)  
@ 1mA  
V(BR)  
VOLTS  
@ IP = 1A  
VC  
VOLTS  
@VWM  
ID  
µA  
@0V, 1 MHz  
VWM  
VOLTS  
@8/20µs  
VC @ IPP  
C
pF  
U0406FC3.3C  
U0406FC05C  
U0406FC08C  
U0406FC12C  
U0406FC15C  
U0406FC24C  
U0406FC36C  
3.3  
5.0  
8.0  
12.0  
15.0  
24.0  
36.0  
4.0  
6.0  
8.5  
13.3  
16.7  
26.7  
40.0  
7.0  
9.8  
12.5V @ 20A  
14.7V @ 17A  
19.2V @ 13A  
29.7V @ 9.0A  
35.7V @ 7.0A  
55.0V @ 5.0A  
84.0V @ 3.0A  
75*  
10**  
10***  
1
1
1
150  
100  
75  
50  
40  
13.4  
19.0  
24.0  
43.0  
64.0  
30  
25  
1
Note 1: All devices are bidirectional. Electrical characteristics apply in both directions.  
Note 2: *Maximum leakage current < 5µA @ 2.8V. **Maximum leakage current <500nA @ 3.3V. ***Maximum leakage current <200nA @ 5V.  
FIGURE 1  
FIGURE 2  
PEAK PULSE POWER VS PULSE TIME  
PULSE WAVE FORM  
120  
100  
10,000  
1,000  
TEST  
tf  
WAVEFORM  
PARAMETERS  
tf = 8µs  
Peak Value IPP  
80  
60  
40  
td = 20µs  
e-t  
250W, 8/20µs Waveform  
100  
td = t  
IPP/2  
20  
0
10  
0.01  
1
10  
100  
1,000  
10,000  
0
5
10  
15  
20  
25  
30  
td - Pulse Duration - µs  
t - Time - µs  
05160.R3 3/05  
2
www.protekdevices.com  

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