Datasheet > TTK8205A

TTK8205A

更新时间： 2024-03-03 10:11:07

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		栅
页数	文件大小	规格书
8页	675K
描述
Trench MOS这种新型垂直结构器件在VDMOS的基础上发展起来，和VDMOS相比，Trench MOS拥行更低的导通屯阻和栅漏电荷密度，因而拥行更低的导通和开义损耗及更快的开义速度。同时由

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TTK8205A 数据手册

TTK8205A,TTX8205AF

Wuxi Unigroup Microelectronics CO.,LTD.

Electrical Characteristics(T_J=25ºC unless otherwise noted)

Value

Typ

Symbol

Parameter

Conditions

Units

Min

Max

STATIC PARAMETERS

BV_DSSDrain-Source Breakdown Voltage

I_D=250µA,V_GS=0V

V_DS=20V, V_GS=0V

T_J=25ºC

I_DSS

Zero Gate Voltage Drain Current

μA

T_J=100ºC

I_GSS

Gate-Body Leakage Current

Gate Threshold Voltage

V_DS=0V, V_GS=±20V

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=3A

V_GS=4.5V, I_D=3A

V_GS=2.5V, I_D=3A

V_DS=10V, I_D=3A

±100

1.2

V_GS(th)

0.5

0.7

20.5

mΩ

R_DS(ON)

Static Drain-Source On-Resistance

19.5

31.5

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

I_S=3A, V_GS=0V

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

Input Capacitance

466

Output Capacitance

V_GS=0V, V_DS=10V, f =1MH_Z

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Q_g(10V)

Total Gate Charge

Q_g(4.5V)

11.8

5.7

0.8

1.4

V_GS=10V,V_DS=10V, I_D=6A

Q_gs

Q_gd

t_D(on)

t_r

Gate Source Charge

Gate Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

V_GS=10V,V_DS=10V, I_D=6A,

R_G=2.5Ω

T_D(off)

t_f

A. Single pulse width limited by maximum junction temperature.

B. The maximum current rating is package limited.

C. The power dissipation P_Dis based on T_J(MAX)=150ºC , using junction-to-case thermal resistance, and is more useful in setting

the upper dissipation limit for cases where additional heatsinking is used.

V1.0

www.tsinghuaicwx.com

123 4 5 6 7 8

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