Datasheet > TSBT30200CT

TSBT30200CT

更新时间： 2024-04-09 18:58:39

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	522K
描述
30A,200V,Schottky Barrier Rectifiers

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TSBT30200CT 数据手册

Planar MOS Schottky Barrier Rectifiers

TSBT30200CTG TSBTF30200CTG TSBTB30200CTG

Features

Lead-free



Planar MOS schottky technology.

High efficiency operation.

Low thermal resistance.

Low forward voltage drop, low power losses.

Non-Halogen.

TSBT30200CTG

TO-220AB

TSBTF30200CTG

ITO-220AB

Qualified to AEC-Q101 Standards for High Reliability.

Typical Applications

Device optimized for low forward voltage drop to maximize

efficiency in Power Supply applications.

Mechanical Data

TSBTB30200CTG

TO-263



Case: TO-220AB、ITO-220AB、TO-263.

Molding compound, UL flammability classification rating

94V-0.



Terminals: Matte tin plated leads, solderable per

MIL-STD-202, Method 208.

Ordering Information

Part Number

Package

Shipping

Marking Code

TSBT30200CTG

TSBTF30200CTG

TSBTB30200CTG

TO-220AB

ITO-220AB

TO-263

50/Tube

SBT30200CT

SBTF30200CT

SBTB30200CT

50/Tube

50/Tube or 800/Tape Reel

Maximum Ratings (@T_A=25℃ unless otherwise specified)

Characteristic

Symbol

Value

Units

Peak repetitive reverse voltage

V_RRM

V_RMS

V_DC

200

140

200

RMS reverse voltage

DC blocking voltage

Maximum average forward output current per device

Peak forward surge current,

8.3ms single half-sine-wave

I_F(AV)

I_FSM

250

Thermal Characteristics

Parameter

Symbol TSBT30200CTG TSBTF30200CTG TSBTB30200CTG Units

°C

Typical thermal resistance per leg

R _ΘJC

2.0

4.0

3.0

°C

Operating junction temperature range

Storage temperature range

T_J

150

T_STG

-40 to +150

SKM0064A

www.gmesemi.com

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