Datasheet > TRS6V65H

TRS6V65H

更新时间： 2023-12-20 18:45:13

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	420K
描述
650 V/6 A SiC Schottky Barrier Diode, DFN8×8

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TRS6V65H 数据手册

TRS6V65H

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)

Characteristics

Symbol

Note

Rating

Unit

Repetitive peak reverse voltage

Forward DC current

VRRM

IF(DC)

650

(Note 1)

(Note 2)

(Note 3)

(Note 4)

(Note 5)

(Note 2)

Non-repetitive peak forward surge current

IFSM

310

Power dissipation

Junction temperature

Storage temperature

175

�

Tstg

-55 to 175

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Tc = 151 �

Note 2: Tc = 25 �

Note 3: f = 50 Hz (half-sine wave, t = 10 ms), Tc = 25 �

Note 4: f = 50 Hz (half-sine wave, t = 10 ms), Tc = 150 �

Note 5: Square wave, t = 10 µs, Tc = 25 �

5. Thermal Characteristics

Characteristics

Symbol

Note

Max

2.50

Unit

Thermal resistance (junction-to-case)

Note 1: Tc = 25�

Rth(j-c)

(Note 1)

�/W

6. Electrical Characteristics (Unless otherwise specified, Ta = 25 �)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward voltage (pulse measurement)

Forward voltage(pulse measurement)

Forward voltage (pulse measurement)

Reverse current(pulse measurement)

Reverse current (pulse measurement)

Total capacitance

IF = 3 A

IF = 6 A

ꢀ

1.0

1.2

1.36

1.1

ꢀ

1.35

ꢀ

IF = 6 A, Ta = 150�

VR = 650 V

ꢀ

µA

VR = 650 V, Ta = 150�

VR = 1 V, f = 1 MHz

VR = 400 V, f = 1 MHz

VR = 650 V, f = 1 MHz

VR = 400 V, f = 1 MHz

392

ꢀ

Total capacitive charge

ꢀ

Toshiba Electronic Devices & Storage Corporation

2023-04-10

Rev.1.0

123 4 5 6 7

中文翻译

下载PDF

与TRS6V65H相关器件

型号	品牌	获取价格	描述	数据表
TRS7006	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 700V V(BR)CEO \| 1A I(C) \| TO-66
TRS-7010AC-EMG	OPTOWAY	获取价格	Transceiver,
TRS-7010ACFG	OPTOWAY	获取价格	Transceiver,
TRS-7010ACTG	OPTOWAY	获取价格	Transceiver,
TRS-7010AFG	OPTOWAY	获取价格	Transceiver,
TRS-7010AG	OPTOWAY	获取价格	5V / 1310 nm / 1.25 Gbps RoHS Compliant Optical Single-Mode Transceiver
TRS-7010ATG	OPTOWAY	获取价格	Transceiver,
TRS-7010C-EMG	OPTOWAY	获取价格	Transceiver,
TRS-7010CFG	OPTOWAY	获取价格	Transceiver,
TRS-7010CTG	OPTOWAY	获取价格	Transceiver,