Datasheet > TLV2371-DIE

TLV2371-DIE

更新时间： 2024-02-11 13:21:41

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
5页	70K
描述
TLV2371-DIE Rail-to-Rail Input/Output Operational Amplifier with Shutdown

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TLV2371-DIE 数据手册

TLV2371-DIE

SLOS872 –MARCH 2014

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

3 Bare Die Information

BACKSIDE

POTENTIAL

BOND PAD

METALLIZATION COMPOSITION

BOND PAD

THICKNESS

DIE THICKNESS

BACKSIDE FINISH

Silicon with backgrind

10.5 mils.

Floating

AlCu

1500 nm

Bond Pad Coordinates in Microns

DESCRIPTION

PAD NUMBER

X MIN

Y MIN

511.25

X MAX

109.5

389.5

823.5

455.5

Y MAX

596.25

112

OUT

VDD

N/C

IN-

24.5

304.5

738.5

370.5

26.75

511.25

111.75

596.25

IN+

GND

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