Datasheet > TLMG1100

TLMG1100

更新时间： 2024-01-25 06:43:21

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
15页	302K
描述
Ultrabright 0603 LED

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中文翻译

获取价格

数据手册

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TLMG1100 数据手册

TLMB / G / O / P / S / Y1100

Vishay Semiconductors

VISHAY

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

TLMS1100 ,TLMO1100 ,TLMY1100 ,TLMG1100, TLMP1100

Parameter

Reverse voltage

Test condition

Symbol

V_R

Value

Unit

DC Forward current

T_amb≤ 60 °C

I_F

I_FSM

P_V

0.5

Surge forward current

Power dissipation

t_p≤ 10 µs

T_amb≤ 75 °C

°C

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

T_j

120

T_amb

T_stg

T_sd

- 40 to + 100

260

°C

acc. Vishay spec

°C

Thermal resistance junction/

ambient

mounted on PC board

(pad size > 5 mm²)

R_thJA

480

K/W

TLMB1100

Parameter

Test condition

Symbol

V_R

Value

Unit

Reverse voltage

DC Forward current

T_amb≤ 60 °C

t_p≤ 10 µs

I_F

I_FSM

P_V

0.1

Surge forward current

Power dissipation

T_amb≤ 60 °C

°C

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

T_j

100

T_amb

T_stg

T_sd

- 40 to + 100

260

°C

acc. Vishay spec

°C

Thermal resistance junction/

ambient

mounted on PC board

(pad size > 5 mm²)

R_thJA

480

K/W

Optical and Electrical Characteristics

T_amb= 25 °C, unless otherwise specified

Red

TLMS1100

Parameter

Test condition

I_F= 20 mA

Symbol

Min

Typ.

Max

639

Unit

mcd

Luminous intensity ²⁾

Dominant wavelength

I_V

λ_d

λ_p

I_F= 20 mA

627

633

645

deg

Peak wavelength

Angle of half intensity

Forward voltage

V_F

V_R

C_j

2.1

3.0

Reverse voltage

_R= 10 µA

_R= 0, f = 1 MHz

Junction capacitance

²⁾in one Packing Unit I_Vmax/I_Vmin≤ 1.6

www.vishay.com

Document Number 83173

Rev. 1.8, 30-Aug-04

123 4 5 6 7...15

中文翻译

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