Datasheet > TK72A08N1

TK72A08N1

更新时间： 2022-06-02 02:49:54

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
9页	239K
描述
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)

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TK72A08N1 数据手册

TK72A08N1

6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Reverse drain current (DC)

Symbol

Test Condition

Min

Typ.

Max

Unit

(Note 5)

IDR

IDRP

VDSF



Reverse drain current (pulsed)

Diode forward voltage

339

-1.2

IDR = 72 A, VGS = 0 V

Reverse recovery time

(Note 6)

trr

IDR = 72 A, VGS = 0 V

-dIDR/dt = 100 A/µs



Reverse recovery charge

Qrr

150

Note 5: Ensure that the channel temperature does not exceed 150.

Note 6: Ensure that VDS peak does not exceed VDSS.

7. Marking (Note)

Fig. 7.1 Marking

Note: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on

the restriction of the use of certain hazardous substances in electrical and electronic equipment.

2012-05-29

Rev.1.0

1 2 345 6 7...9

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