TCS1200
1200 Watts, 53 Volts
Pulsed Avionics at 1030 MHz
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
CASE OUTLINE
55TU-1
The TCS1200 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems at 1030 MHz, with the pulse width and duty
required for TCAS applications. The device has gold thin-film metalization and
emitter ballasting for proven highest MTTF. The transistor includes input and
output prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C1
2095 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
65 V
3.5 V
60 A
Emitter to Base Voltage (BVebo
Collector Current (Ic)
)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65 to +200 °C
+200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
Pout
Pg
ηc
Power Out
Power Gain
Collector Efficiency
Return Loss
1200
10.2
45
W
dB
%
dB
ns
Pulse Width = 32µs
Duty Factor = 2%
F = 1030 MHz, Vcc = 53 Volts
Pin = 115 Watts
RL
Tr
Pd
VSWR
-10
Rise Time
100
0.7
Pulse Droop
dB
Load Mismatch Tolerance1
3.0:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo
BVces
hFE
Emitter to Base Breakdown
Collector to Emitter Breakdown Ic = 100 mA
DC – Current Gain
Thermal Resistance
Ie = 40 mA
3.5
65
20
V
V
Vce = 5V, Ic = 5A
θjc1
°C/W
0.02
NOTES: 1. At rated output power and pulse conditions
Preliminary – May 2007
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.