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TC9401EJD PDF预览

TC9401EJD

更新时间: 2024-02-08 11:02:04
品牌 Logo 应用领域
美国微芯 - MICROCHIP 转换器
页数 文件大小 规格书
20页 504K
描述
Voltage-to-Frequency/Frequency-to-Voltage Converters

TC9401EJD 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.78
Is Samacsys:N转换器类型:VOLTAGE TO FREQUENCY CONVERTER
JESD-30 代码:R-GDIP-T14端子数量:14
封装主体材料:CERAMIC, GLASS-SEALED封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:DUALBase Number Matches:1

TC9401EJD 数据手册

 浏览型号TC9401EJD的Datasheet PDF文件第1页浏览型号TC9401EJD的Datasheet PDF文件第2页浏览型号TC9401EJD的Datasheet PDF文件第4页浏览型号TC9401EJD的Datasheet PDF文件第5页浏览型号TC9401EJD的Datasheet PDF文件第6页浏览型号TC9401EJD的Datasheet PDF文件第7页 
TC9400/9401/9402  
*Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. These  
are stress ratings only and functional operation of the device  
at these or any other conditions above those indicated in the  
operation sections of the specifications is not implied.  
Exposure to Absolute Maximum Rating conditions for  
extended periods may affect device reliability.  
1.0  
ELECTRICAL  
CHARACTERISTICS  
Absolute Maximum Ratings*  
V
– V  
...........................................................+18V  
DD  
SS  
I
........................................................................ 10mA  
IN  
V
V
OUTMAX – V  
Common...................................... 23V  
OUT  
– V ..........................................................-1.5V  
REF  
SS  
Storage Temperature Range.............. -65°C to +150°C  
Operating Temperature Range:  
C Device ........................................... 0°C to +70°C  
E Device......................................... -40°C to +85°C  
Package Dissipation (T 70°C):  
A
8-Pin CerDIP..............................................800mW  
8-Pin Plastic DIP ........................................730mW  
8-Pin SOIC.................................................470mW  
TC940X ELECTRICAL SPECIFICATIONS  
Electrical Characteristics: VDD = +5V, VSS = -5V, VGND = 0V, VREF = -5V, RBIAS = 100k, Full Scale = 10kHz, unless otherwise  
specified. TA = +25°C, unless temperature range is specified (-40°C to +85°C for E device, 0°C to +70°C for C device).  
Parameter  
Min  
Typ  
Max Min  
Typ  
Max Min  
Typ  
Max  
Units  
Test Conditions  
Voltage-to-Frequency  
Accuracy  
TC9400  
TC9401  
TC9402  
Linearity 10kHz  
0.01  
0.05  
0.25  
0.004 0.01  
0.05  
0.25  
0.5  
%
Output Deviation from  
Full Scale Straight Line Between  
Normalized Zero and  
Full Scale Input  
Linearity 100kHz  
0.1  
0.04  
0.08  
0.25  
%
Output Deviation from  
Full Scale Straight Line Between  
Normalized Zero Read-  
ing and Full Scale Input  
Gain Temperature  
Drift (Note 1)  
±25  
±10  
±10  
±40  
±25  
±10  
±10  
±40  
±50  
±10  
±20  
±100  
ppm/°C Variation in Gain A due  
Full Scale to Temperature Change  
Gain Variance  
% of  
Variation from Ideal  
Nominal Accuracy  
Zero Offset  
±50  
±50  
±100  
mV  
Correction at Zero  
(Note 2)  
Adjust for Zero Output  
when Input is Zero  
Zero Temperature  
Drift (Note 1)  
±25  
±50  
±25  
±50  
±50  
±100  
µV/°C  
Variation in Zero Offset  
Due to Temperature  
Change  
Note 1: Full temperature range; not tested.  
2: IIN = 0.  
3: Full temperature range, IOUT = 10mA.  
4: IOUT = 10µA.  
5: Threshold Detect = 5V, Amp Out = 0V, full temperature range.  
6: 10Hz to 100kHz; not tested.  
7: 5µsec minimum positive pulse width and 0.5µsec minimum negative pulse width.  
8: tR = tF = 20nsec.  
9: RL 2k, tested @ 10kΩ.  
10: Full temperature range, VIN = -0.1V.  
2002 Microchip Technology Inc.  
DS21483B-page 3  

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