Datasheet > TBCW67A

TBCW67A

更新时间： 2024-04-09 18:58:23

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	384K
描述
32V,0.8A,General Purpose PNP Bipolar Transistor

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TBCW67A 数据手册

PNP Silicon Epitaxial Planar Transistor

TBCW67

Features



Complimentary to TBCW65

High collector current

High current gain

Low collector-emitter saturation voltage

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanic al Data



Case: SOT-23

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-23

Ordering Information

Part Number

TBCW67A

Package

Shipping Quantity

3000 pcs / Tape & Reel

Marking Code

SOT-23

TBCW67B

TBCW67C

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter Symbol

Collector-Base Breakdown Voltage

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

-45

-32

-5

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Continuous Collector Current

Peak Collector Current

-0.8

-1

I_CM

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

330

Unit

°C/W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Operating junction Temperature

Storage Temperature Range

R_θJA

R_θJC

R_θJL

395

218

191

T_J

-55 ~ +150

T_STG

°C

Note 1: The data tested by surface mounted on a 15mm * 15mm * 1mm FR4-epoxy P.C.B

STM0681A: August 2022

www.gmesemi.com

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