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TA2132BFG

更新时间： 2024-01-22 14:03:25
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东芝 - TOSHIBA 消费电路商用集成电路接收器集成电路光电二极管
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TA2132BFG 数据手册

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TA2132BP/BF  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
V
Supply voltage  
TA2132BP  
V
8
CC  
750  
Power dissipation  
P
(Note 1)  
mW  
D
TA2132BF  
350  
Operating temperature  
Storage temperature  
T
-25~75  
-55~150  
°C  
°C  
opr  
T
stg  
Note 1: Deleted above Ta = 25°C in the proportion of 6 mW/°C for TA2132BP and of 2.8 mW/°C for TA2132BF.  
Electrical Characteristics (Unless otherwise specified, Ta = 25°C, V = 3 V,  
CC  
F/E  
: f = 98 MHz, f = 1 kHz  
m
FM IF : f = 10.7 MHz, Df = ±75 kHz, f = 1 kHz  
m
AM  
: f = 1 MHz, MOD = 30%, f = 1 kHz)  
m
Test  
Characteristics  
Supply current  
Symbol  
Test Condition  
FM mode, V = 0  
Min  
Typ.  
Max  
Unit  
mA  
Circuit  
I
1
1
1
1
2
1
1
1
1
1
1
1
1
1
¾
¾
¾
¾
¾
38  
180  
¾
¾
¾
20  
55  
¾
¾
7.3  
3.6  
10  
11.0  
7.0  
¾
CC (FM)  
in  
I
AM mode, V = 0  
CC (AM)  
in  
Input limiting voltage  
Quiescent sensitivity  
Local OSC voltage  
V
-3dB limiting point  
S/N = 40dB  
dBmV EMF  
dBmV EMF  
in (lim)  
F/E  
Q
S
15  
¾
V
f
= 108 MHz  
130  
43  
¾
mV  
rms  
OSC  
OSC  
Input limiting voltage  
Recovered output voltage  
Signal to noise ratio  
Total harmonic distortion  
AM rejection ratio  
V
-3dB limiting point  
48  
300  
¾
dBmV EMF  
mVrms  
dB  
in (lim) IF  
V
V
V
V
V
V
V
V
V
= 80dBmV EMF  
= 80dBmV EMF  
= 80dBmV EMF  
= 80dBmV EMF  
= 28dBmV EMF  
= 60dBmV EMF  
= 60dBmV EMF  
= 60dBmV EMF  
240  
72  
OD  
in  
in  
in  
in  
in  
in  
in  
in  
FM IF  
S/N  
THD  
AMR  
0.5  
60  
¾
%
¾
dB  
Voltage gain  
G
38  
75  
110  
¾
mVrms  
mVrms  
dB  
V
Recovered output voltage  
Signal to noise ratio  
Total harmonic distortion  
V
80  
OD  
AM  
S/N  
41  
THD  
1.0  
¾
%
6
2002-07-23  
1...3456789...13

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