Datasheet > T2N7002HM

T2N7002HM

更新时间： 2024-04-09 18:58:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
9页	699K
描述
0.3A, 60V, 0.15W, N Channel, Small Signal MOSFETs

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T2N7002HM 数据手册

N-Channel Enhancement Mode MOSFET

T2N7002H

Features



Low on-resistance

ESD protected gate up to 2kV HBM

High-speed switching

T2N7002H

SOT-23

T2N7002HW

SOT-323

Drive circuits can be simple

Parallel use is easy

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



N-channel enhancement mode effect transistor

Switching application

T2N7002HT

SOT-523

T2N7002HL

DFN1006-3

Mechanical Data



Case: SOT-23, SOT-323, SOT-523, DFN1006-3, SOT-723

Molding Compound, UL Flammability Classification Rating

94V-0

T2N7002HM

SOT-723



Terminals: Matte Tin Plated Leads, Solderable Per MIL-

STD-202, Method 208

Ordering Information

Part Number

Package

Shipping

Marking Code

T2N7002H

T2N7002HW

T2N7002HT

T2N7002HL

T2N7002HM

SOT-23

SOT-323

SOT-523

DFN1006-3

SOT-723

3000 pcs / Tape & Reel

10000 pcs / Tape & Reel

7002K

RKS

7002K

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-Source Voltage

Symbol

Value

Units

V_DSS

V_GSS

I_D

Gate -Source Voltage

±20

Continuous Drain Current

300

Pulsed Drain Current (t_p= 10μs)

Single Pulse Avalanche Energy ^*2

I_DM

2000

0.11

0.35

E_AS

SOT-23

SOT-323

SOT-523

DFN1006-3

SOT-723

0.25

0.15

Power Dissipation

P_D

MTM0004A: August 2023 [2.8]

www.gmesemi.com

12 3 4 5 6 7...9

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